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STTH12R06xx

Description
12 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size61KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STTH12R06xx Overview

12 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

STTH12R06xx Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationHIGH VOLTAGE ULTRA FAST RECOVERY
Phase1
Maximum reverse recovery time0.0450 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current12 A
Maximum non-repetitive peak forward current100 A
®
STTH12R06D/FP
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
I
RM
(typ.)
Tj (max)
V
F
(max)
trr (max)
FEATURES AND BENEFITS
s
s
12 A
600 V
7A
175 °C
1.8 V
45 ns
K
A
TO-220FPAC
STTH12R06FP
K
s
s
Ultrafast switching
Low reverse recovery current
Reduces switching losses
Low thermal resistance
DESCRIPTION
The STTH12R06D/FP, which is using ST Turbo 2
600V technology, is specially suited as boost
diode in continuous mode power factor corrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
A
K
TO-220AC
STTH12R06D
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
tp = 10 ms
Sinusoidal
Value
600
30
12
100
- 65 + 175
+ 175
Unit
V
A
A
A
°C
°C
January 2002 - Ed: 1B
1/6

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