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1N4934GPT50R

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, D4, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size43KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N4934GPT50R Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, D4, 2 PIN

1N4934GPT50R Parametric

Parameter NameAttribute value
Parts packaging codeDO-41
package instructionD4, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation2.73 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N4933GP-1N4937GP
1N4933GP - 1N4937GP
Features
Low forward voltage drop.
High surge current capability.
High reliability.
High current capability.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
4933G
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
4934
100
Value
4935
200
1.0
30
-65 to +175
-65 to +175
4936
400
4937
600
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
2.73
55
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
4933G
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
4934
Device
4935
1.2
150
5.0
100
15
4936
4937
Units
V
ns
µA
µA
pF
2001
Fairchild Semiconductor Corporation
1N4933GP-1N4937GP, Rev. C

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