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3LP02SP

Description
Ultrahigh-Speed Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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3LP02SP Overview

Ultrahigh-Speed Switching Applications

3LP02SP Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.2 A
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance3.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Ordering number:ENN6554
P-Channel Silicon MOSFET
3LP02SP
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm
2180
[3LP02SP]
4.0
3.0
2.2
0.4
0.5
0.6
1.8
15.0
0.4
0.4
1 2
1.3
0.7
3
1.3
0.7
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
10µs, duty cycle
1%
Conditions
3.0
3.8nom
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
Ratings
–30
±10
–0.2
–0.8
0.25
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–100µA
VDS=–10V, ID=–100mA
ID=–100mA, VGS=–4V
ID=–50mA, VGS=–2.5V
ID=–10mA, VGS=–1.5V
–0.4
0.21
0.3
2.4
3.5
10
3.1
4.9
20
Conditions
Ratings
min
–30
–10
±10
–1.4
typ
max
Unit
V
µA
µA
V
S
Marking : XD
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81000TS (KOTO) TA-2009 No.6554-1/4

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