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BFR93AW115

Description
RF Bipolar Transistors TAPE-7 TNS-RFSS
Categorysemiconductor    Discrete semiconductor   
File Size106KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BFR93AW115 Overview

RF Bipolar Transistors TAPE-7 TNS-RFSS

BFR93AW115 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF Bipolar Transistors
RoHSDetails
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max12 V
Emitter- Base Voltage VEBO2 V
Continuous Collector Current0.035 A
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseSOT-323
PackagingCut Tape
PackagingMouseReel
PackagingReel
Collector- Base Voltage VCBO15 V
DC Current Gain hFE Max40
Height1 mm
Length2.2 mm
Operating Frequency5000 MHz
TypeRF Bipolar Small Signal
Width1.35 mm
Gain Bandwidth Product fT5000 MHz
Maximum DC Collector Current0.035 A
Pd - Power Dissipation300 mW
Factory Pack Quantity3000
Unit Weight0.000198 oz
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 18

BFR93AW115 Related Products

BFR93AW115 BFR93AW135
Description RF Bipolar Transistors TAPE-7 TNS-RFSS RF Bipolar Transistors Single NPN 12V 35mA 300mW 40 5GHz
Product Attribute Attribute Value Attribute Value
Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS Details Details
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity NPN NPN
Collector- Emitter Voltage VCEO Max 12 V 12 V
Emitter- Base Voltage VEBO 2 V 2 V
Continuous Collector Current 0.035 A 35 mA
Configuration Single Single
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-323 SOT-23
Type RF Bipolar Small Signal RF Bipolar Small Signal
Pd - Power Dissipation 300 mW 300 mW
Factory Pack Quantity 3000 10000
Unit Weight 0.000198 oz 0.000198 oz
Packaging Reel Reel
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