NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM128L08
Advance Information
EM128L08 Family
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM
Overview
The EM128L08 is an integrated memory device
containing a low power 1 Mbit Static Random
Access Memory organized as 131,072 words by 8
bits. The device is fabricated using NanoAmp’s
advanced CMOS process and high-speed/low-
power circuit technology. This device is designed
for very low voltage operation making it quite suit-
able for battery powered devices.
It is also
designed for both very low operating and standby-
currents. The device pinout is compatible with
other standard 128Kx8 SRAMs.
Features
•
•
•
•
•
•
Wide Voltage Range:
2.3 to 3.6 Volts
Extended Temperature Range:
-40 to +85
o
C
Fast Cycle Time:
T
ACC
< 55 ns @ 3.0V
Very Low Operating Current:
I
CC
< 10 mA typical at 3V, 10 Mhz
Very Low Standby Current:
I
SB
< 10
µA
@ 55
o
C
32-Pin TSOP, STSOP, Packages Available
FIGURE 1: Typical Operating Current Curves
12.5
10.0
3.6 Volts
Typical I
CC
7.5
2.3 Volts
5.0
2.5
0.0
0
2.5
5.0
7.5
10.0
12.5
15.0
Operating Frequency (Mhz)
Stock No. 23033-A
Advance Information - Subject to Change Without Notice
1
NanoAmp Solutions, Inc.
EM128L08
Advance Information
FIGURE 1: Pin Configuration
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EM128L08
STSOP, TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
D7
D6
D5
D4
D3
VSS
D2
D1
D0
A0
A1
A2
A3
FIGURE 2: Functional Block Diagram
Input/
Data I/O
Output
Mux
and
D
0
- D
7
Buffers
Address
Inputs
A
0
- A
16
Address
Decode
Logic
128K x 8
RAM Array
CE
WE
OE
Pin Name
A0-A16
D0-D7
CE
OE
Control
Logic
TABLE 1: Pin Description
Pin Function
Address Inputs
Data Inputs/Outputs
Chip Enable (Active Low)
Output Enable (Active Low)
Pin Name
WE
V
CC
V
SS
NC
Pin Function
Write Enable (Active Low)
Power
Ground
Not Connected (Do not connect signal)
TABLE 2: Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X
L
H
D0-D7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
Standby
Write
Read
Active
POWER
Standby
Standby
Active -> Standby*
Active -> Standby*
Standby*
*The device will consume active power in this mode whenever addresses are changed
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2
NanoAmp Solutions, Inc.
EM128L08
Advance Information
TABLE 3: Absolute Maximum Ratings*
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
*
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
Rating
–0.3 to V
CC
+0.3
–0.3 to 4.0
500
–40 to 125
-40 to +85
260
o
C, 10sec(Lead only)
Unit
V
V
mW
o
o
o
C
C
C
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 4: Operating Characteristics (Over specified Temperature Range)
Item
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Cur-
rent @ 1
µS
Cycle Time
Read/Write Operating Supply Cur-
rent @ 70 nS Cycle Time
Read/Write Quiescent Operating
Supply Current (Note 1)
Symbol
V
CC
V
DR
V
IH
V
IL
V
OH
V
O L
I
LI
I
LO
I
CC1
I
CC2
I
OH
= 0.2mA
I
OL
= -0.2mA
V
IN
= 0 to V
CC
OE = V
IH
or Chip Disabled
VCC=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, IOL = 0
VCC=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, IOL = 0
V
IN
= V
CC
or 0V
Chip Enabled, IOL = 0 f = 0,
t
A
= 85
o
C, VCC = 3.3 V
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 55
o
C, VCC = 3.3V
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, VCC = 3.3V
Vcc = 2.0V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
Chip Disabled (Note 3)
Test Conditions
Min
2.3
1.8
0.7V
CC
–0.5
V
CC
–0.2
0.2
0.5
0.5
3.0
14.0
Typ
Max
3.6
3.6
V
CC
+0.5
0.3V
CC
Unit
V
V
V
V
V
V
µA
µA
mA
mA
I
CC3
20
µA
Operating Standby Current
(Note 1)
Maximum Standby Current
(Note 1)
Maximum Data Retention Current
(Note 1)
I
SB1
10
µA
I
SB2
20
µA
I
DR
10
µA
Note 1.
This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go
into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order
to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either
V
CC
or V
SS
.
Stock No. 23033-A
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3
NanoAmp Solutions, Inc.
EM128L08
Advance Information
TABLE 5: Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 30pF
-40 to +85
o
C
TABLE 6: Timing
2.3 - 3.6 V
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
Min.
t
RC
t
AA
t
CO
t
O E
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
40
0
5
10
5
0
0
10
70
50
50
40
0
0
20
35
0
5
20
20
70
70
70
25
10
5
0
0
10
55
45
45
35
0
0
15
15
15
Max.
Min.
55
55
55
20
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3.0 - 3.6 V
Units
Stock No. 23033-A
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NanoAmp Solutions, Inc.
EM128L08
Advance Information
FIGURE 3: Read Cycle Timing (WE = V
IH
)
t
RC
A0-A16
t
AA
t
CE
CE1/CE2
t
LZ
OE
t
OLZ
D0-D7
Data Valid
t
OH
t
OE
Enable Valid
t
OHZ
t
HZ
FIGURE 4: Write Cycle Timing (OE clock)
t
WC
A0-A16
t
AW
OE
t
CW
CE1/CE2
Enable Valid
t
WP
WE
t
AS
t
WHZ
t
DW
Data In
t
OHZ
Data Out
High-Z
Data
t
OW
t
DH
t
WR
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