HiPerFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
DSEA
I
FAV
V
RRM
t
rr
DSEA 59-06BC
DSEC 59-06BC
= 2x30 A
= 600 V
= 35 ns
Preliminary Data Sheet
V
RSM
V
600
V
RRM
V
600
DSEA 59-06BC
DSEC 59-06BC
1
1
2
3
2
3
Type
1
DSEC
2
3
ISOPLUS220
TM
E153432
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight
Symbol
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
Conditions
Lead current limit
T
C
= 105°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 µH
V
A
= 1.5·V
R
typical; f = 10 kHz; repetitive
Maximum Ratings
45
30
200
0.2
0.1
-40...+175
175
-40...+150
A
A
A
mJ
A
°C
°C
°C
°C
W
V~
g
Features
Isolated back surface*
1.6 mm (0.063 in) from case for 10 s
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
Mounting force
typical
Conditions
T
VJ
= 25°C
T
VJ
= 150°C
I
F
= 30 A;
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
260
136
2500
2
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEP 29-06B data sheet for
characteristic curves
11...65 / 2.5...15 N / lb
Characteristic Values
typ.
max.
250
2
1.56
2.51
1.1
0.6
µA
mA
V
V
K/W
K/W
ns
A
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V;
T
VJ
= 100°C
I
F
= 50 A; -di
F
/dt = 100 A/µs
30
4
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Average current per diode may be limited by center lead RMS current limit when
both diodes are conducting.
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
µs,
Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
DS98817A(07/03)
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