ITAxxU1
Transil™ array for data line protection
Features
■
■
■
■
■
■
High surge capability Transil array:
I
PP
= 40 A (8/20 µs)
Peak pulse power : 300 W (8/20 µs)
Up to 6 bidirectional Transil functions
Low clamping factor (V
CL
/ V
BR
) at high current
level
Low leakage current
ESD protection up to 15 kV
I/O1 1
I/O2 2
I/O3 3
I/O4 4
8 I/O6
7 GND
6 GND
5 I/O5
SO-8
Figure 1.
Functional diagram
Complies with the following standards
■
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G- Method 3015-7: class 3B
– 25 kV (human body model)
■
Applications
Data transmission lines protection, such as:
■
■
Unipolar signal up to 5.5 V
Bipolar signal in the ± 2.5 V range
Description
Transil diode arrays provide high overvoltage
protection by clamping action. Their
instantaneous response to transient overvoltages
makes them particularly suited to protect voltage
sensitive devices such as MOS technology and
low voltage supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
TM: Transil is a trademark of STMicroelectronics
November 2007
Rev 2
1/8
www.st.com
8
Characteristics
ITAxxU1
1
Table 1.
Symbol
P
PP
I
PP
I
2
t
T
j
T
stg
T
L
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
Peak pulse power (8/20 µs)
(1)
Peak pulse current (8/20 µs)
(1)
Wire I
2
t value
(1)
Maximum operating junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10 s
T
j
initial = T
amb
T
j
initial = T
amb
Value
300
40
0.6
125
-55 to +150
260
Unit
W
A
A
2
s
°C
°C
°C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Table 2.
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
C
Electrical characteristics (T
amb
= 25 °C)
Parameter
I
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Capacitance
V
BR
@ I
R
I
RM
@ V
RM
max.
mA
1
µA
10
V
5
V
CL
max.
(1)
V
BR
V
CL
V
RM
I
F
V
F
I
RM
V
I
PP
@
I
PP
V
CL
max.
(1)
@
I
PP
αT
max.
C
max.
(2)
V
F
@ I
F
max.
Order code
min.
(1)
8/20 µs
8/20 µs
V
ITA6V1U1
6.51
V
10
A
10
V
12
A
25
10
-4
/ °C
4
pF
1500
V
1.3
A
1
1. Between I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.
2/8
ITAxxU1
Characteristics
Figure 2.
Pulse waveform
Figure 3.
Typical peak pulse power versus
exponential pulse duration
%I
PP
100
8µs
P
PP
(W)
1000
T
j
initial=25°C
Pulse waveform 8/20µs
50
100
0
20µs
t
t
P
(ms) expo
10
1E-3
1E-2
1E-1
1E+0
1E+1
Figure 4.
Clamping voltage versus peak
pulse current (exponential
waveform 8/20 µs)
Figure 5.
Peak current I
DC
inducing open
circuit of the wire for one
input/output versus pulse duration
(typical values)
V
CL
(V)
1E+03
T
j
initial=25°C
1E+03
%I
PP
100
50
I
DC
(A)
Exponential waveform
1E+02
0
t
r
t
p
t
1E+02
1E+01
1E+01
1E+00
1E-01
1E+00
I
PP
(A)
1E+01
1E+02
1E+00
1E-02
1E-01
t
P
(ms)
1E+00
1E+01
Figure 6.
Junction capacitance versus
reverse applied voltage for one
input/output (typical values)
Figure 7.
Relative variation of leakage
current versus junction
temperature
C(pF)
1500
T
j
=25°C
F=1MHz
I
R
(T
j
)
I
R
(T
j
=25°C)
5E+3
1E+3
V
R
=V
RM
1250
1E+2
1000
1E+1
750
1E+0
500
0.0
0.5
1.0
1.5
2.0
V
R
(V)
2.5
3.0
3.5
4.0
4.5
5.0
T
j
(°C)
1E-1
0
25
50
75
100
125
150
3/8
Application information
ITAxxU1
2
Application information
Figure 8.
µP I/O lines
+5V
I/O
I/O
I/O
µP
interface
I/O
I/O
I/O
GND
Figure 9.
± 2.5 V datalines
I/O
Line
driver
I/O
I/O
I/O
GND
+2.5V -2.5V
4/8
ITAxxU1
Ordering information scheme
3
Ordering information scheme
Figure 10. Ordering information scheme
ITA
Integrated Transil Array
Breakdown Voltage (min)
25 = 25 Volt
Type of lines protected
U = Unidirectional
Package
1 = SO-8
Packaging
RL = Tape & reel
Blank = Tube
6V1
U
1
RL
5/8
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