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KM29V16000AR

Description
2M X 8 BIT NAND FLASH MEMORY
Categorystorage    storage   
File Size2MB,26 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM29V16000AR Overview

2M X 8 BIT NAND FLASH MEMORY

KM29V16000AR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionSOP, TSOP40/44,.46,32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time45 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G40
JESD-609 codee0
memory density16777216 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size512
Number of terminals40
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeTSOP40/44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE
page size256 words
Parallel/SerialPARALLEL
power supply3.3,3.3/5 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
reverse pinoutYES
Department size4K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
switch bitNO
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