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KM29V16000ATS

Description
FLASH MEMORY
Categorystorage    storage   
File Size1MB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM29V16000ATS Overview

FLASH MEMORY

KM29V16000ATS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instruction0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40
Contacts44
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time45 ns
Other featuresHARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE
command user interfaceYES
Data pollingNO
Data retention time - minimum10
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.41 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size512
Number of terminals40
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP40/44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size256 words
Parallel/SerialPARALLEL
power supply3.3,3.3/5 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size4K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
switch bitNO
typeSLC NAND TYPE
width10.16 mm
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