KM29V64001T datasheet, PDF - EEWORLD Datasheet

KM29V64001T: Description8M X 8 BIT NAND FLASH MEMORY; Categorystorage storage; File Size1MB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM29V64001T Overview

8M X 8 BIT NAND FLASH MEMORY

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP40/44,.46,32
Contacts	44
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	35 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.41 mm
memory density	67108864 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	1K
Number of terminals	40
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP40/44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	512 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	8K
Maximum standby current	0.0001 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	10.16 mm

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