KM29V64001RS datasheet, PDF - EEWORLD Datasheet

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KM29V64001RS: Description8M X 8 BIT NAND FLASH MEMORY; Categorystorage storage; File Size1MB，22 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM29V64001RS Overview

8M X 8 BIT NAND FLASH MEMORY

KM29V64001RS Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2-R, TSOP40/44,.46,32
Contacts	44
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	35 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.41 mm
memory density	67108864 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	1K
Number of terminals	40
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2-R
Encapsulate equivalent code	TSOP40/44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	512 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
reverse pinout	YES
Maximum seat height	1.2 mm
Department size	8K
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	10.16 mm

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KM29V64001RS Related Products

	KM29V64001RS	KM29V64001TS
Description	8M X 8 BIT NAND FLASH MEMORY	8M X 8 BIT NAND FLASH MEMORY
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	TSOP2
package instruction	TSOP2-R, TSOP40/44,.46,32	TSOP2, TSOP40/44,.46,32
Contacts	44	44
Reach Compliance Code	unknow	unknow
ECCN code	3A991.B.1.A	3A991.B.1.A
Maximum access time	35 ns	35 ns
command user interface	YES	YES
Data polling	NO	NO
JESD-30 code	R-PDSO-G40	R-PDSO-G40
JESD-609 code	e0	e0
length	18.41 mm	18.41 mm
memory density	67108864 bi	67108864 bi
Memory IC Type	FLASH	FLASH
memory width	8	8
Number of functions	1	1
Number of departments/size	1K	1K
Number of terminals	40	40
word count	8388608 words	8388608 words
character code	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	8MX8	8MX8
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2-R	TSOP2
Encapsulate equivalent code	TSOP40/44,.46,32	TSOP40/44,.46,32
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
page size	512 words	512 words
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V
Programming voltage	3 V	3 V
Certification status	Not Qualified	Not Qualified
ready/busy	YES	YES
Maximum seat height	1.2 mm	1.2 mm
Department size	8K	8K
Maximum standby current	0.0001 A	0.0001 A
Maximum slew rate	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
switch bit	NO	NO
width	10.16 mm	10.16 mm

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