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SHD224502

Description
HERMETIC POWER MOSFET N-CHANNEL
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SHD224502 Overview

HERMETIC POWER MOSFET N-CHANNEL

SHD224502 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
Parts packaging codeTO-258AA
package instructionFLANGE MOUNT, R-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-258AA
JESD-30 codeR-XSFM-P3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4156, Rev. –
SHD224502
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
100 Volt, .07 Ohm, 30A MOSFET
Isolated Hermetic Metal Package
Fast Switching
Low R
DS (on)
Equivalent to IRFM150
ALL RATINGS ARE AT T
C
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
J
/T
STG
P
D
MIN.
-
-
-
-55
-
TYP.
-
-
-
-
-
MAX.
±20
34
136
+150
150
UNITS
Volts
Amps
Amps
°C
Watts
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
@ T
C
= 25°C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @
T
C
= 25°C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0
mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
=
21A
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
= 250µA
FORWARD TRANSCONDUCTANCE
V
DS
15V,
I
DS
=
21A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
=
0V
T
J
=
125°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
BV
DSS
100
-
-
Volts
R
DS(ON)
V
GS(th)
g
fs
-
2.0
9.0
-
-
-
0.07
4.0
-
Volts
S(1/Ω)
I
DSS
-
-
25
250
µA
I
GSS
-
-
100
-100
nA
•221
WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798•
World Wide Web Site - www.sensitron.com
E-Mail Address - sales@sensitron.com
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