MP4KE6.8A – MP4KE400CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
400 Watt
Transient Voltage Suppressors
DESCRIPTION
This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high
reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or
10% tolerance options are available. Source control is standard and three increasingly
stringent screening options for enhanced reliability are available.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
High reliability controlled devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Optional screening in reference to MIL-PRF-19500 is also available. Refer to
High Reliability Non-
Hermetic Product
portfolio for more details on Microsemi screening options.
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant versions available.
DO-41
(DO-204AL)
Package
Also available in:
J-bend Package
(surface mount)
MSMBJ5.0A – MSMBJ170A
APPLICATIONS / BENEFITS
•
•
•
•
•
Suppresses transients up to 400 watts @ 10/1000
µs
(see
Figure 1).
2
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF.
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1: MP4KE5.0A to MP4KE91CA
Class 2: MP4KE5.0A to MP4KE47ACA
Class 3: MP4KE5.0A to MP4KE24CA
Class 4: MP4KE5.0A to MP4KE12CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1: MP4KE5.0A to MP4KE30CA
Class 2: MP4KE5.0A to MP4KE15CA
Gull-wing Package
(surface mount)
MSMBG5.0A – MSMBG170A
•
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Leads
(1)
@ 3/8 inch (10 mm) from body
(2)
Peak Pulse Power Dissipation @ 10/1000
µs
o (3)
Off-State Power Dissipation
@ T
L
= +25 C
o (4)
@ T
A
= +25 C
o
Forward Voltage @ 25 C with 8.3 ms half-sine wave
(unidirectional only)
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
D
V
F
T
SP
Value
-65 to +150
50
400
2.5
1.13
3.5
260
Unit
o
C
o
C/W
W
W
V
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
Notes:
1. Or 110 °C/W junction to ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and
track width 1 mm, length 25 mm.
2. With impulse repetition rate (duty factor) of 0.01 % or less (see
Figures 1, 2 and 3
for t
W
, waveform and
derating effects).
3. At 3/8 (10 mm) lead length from body.
4. On FR4 PC board with 110C/W junction to ambient with 4 mm2 copper pads (1 oz) and track width 1
mm and length 25 mm.
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 1 of 6
MP4KE6.8A – MP4KE400CA(e3)
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode indicated by band. Bi-directional not marked.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.3 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M (controlled product)
MA (Avionics grade)
MX ( reference JANTX)
MXL (MX Lite)
(*See
High Reliability Non-
Hermetic Product
portfolio)
Point 4 kilowatt
Encapsulated Plastic
Package
P4K
E
6.8
C
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolerance
A = 5% tolerance level
Blank = 10% tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Stand-off Voltage Rating
Symbol
α
V(BR)
C
I
(BR)
I
D
I
PP
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
P
PP
V
(BR)
V
C
V
WM
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 2 of 6
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
