TPCS8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8004
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 0.56
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 1.8 S (typ.)
Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 200 V)
Enhancement model: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
200
200
±20
1.3
5.2
1.5
W
0.6
1.05
1.3
0.15
150
−55~150
mJ
A
mJ
°C
°C
8
7
6
5
Unit
V
V
V
A
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
―
―
2-3R1B
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy(Note3)
Avalanche current
Repetitive avalanche energy
(Note2a, Note 4)
Channel temperature
Storage temperature range
Weight: 0.035 g (typ.)
Circuit Configuration
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
4
1
2004-07-06
TPCS8004
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
83.3
208
Unit
°C/W
°C/W
Marking
(Note 5)
Part No. (or abbreviation code)
S8004
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
Note 3: V
DD
= 50 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25
Ω,
I
AR
= 1.3 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
○
on lower right of the marking indicates Pin 1.
※
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
2
2004-07-06
TPCS8004
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
I
D
=
0.6 A
V
OUT
R
L
=
167
Ω
4.7
Ω
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
=
200 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
0.6 A
V
DS
=
10 V, I
D
=
0.6 A
Min
⎯
⎯
200
1.5
⎯
0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.56
1.8
380
40
140
4.5
12
23
54
12
8
4
Max
±10
100
⎯
3.5
0.8
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
Unit
µA
µA
V
V
Ω
S
pF
pF
pF
V
GS
10 V
0V
V
DD
∼
100 V
−
Duty
<
1%, t
w
=
10
µs
=
∼
V
DD
−
160 V, V
GS
=
10 V,
I
D
=
1.3 A
⎯
⎯
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Drain reverse current (pulse)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
I
DR
=
1.3 A, V
GS
=
0 V
I
DR
=
1.3 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/µs
Min
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
89
230
Max
5.2
−2.0
⎯
⎯
Unit
A
V
ns
nC
3
2004-07-06
TPCS8004
I
D
– V
DS
5
10
4.8
4
8
6
4.6
4.4
3
4.2
2
Common source
Ta
=
25°C
Pulse test
5
10
8
4
6
I
D
– V
DS
4.8
Common source
Ta
=
25°C
Pulse test
4.6
4.4
3
4.2
2
(A)
I
D
Drain current
4
3.8
Drain current
I
D
(A)
4
3.8
VGS
=
3.6 V
1
VGS
=
3.6 V
1
0
0
10
20
30
40
0
0
2
4
6
8
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
5
Common source
3.0
VDS
=
10 V
Pulse test
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
4
(A)
V
DS
Drain-source voltage
3
(V)
2.5
2.0
Drain current
I
D
1.5
ID
=
2.6 A
2
25°C
1
1.0
1.3
0.5
0.6
0.32
4
8
12
16
20
Ta
=
100°C
−55°C
0
0
1
2
3
4
5
0
0
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
7
5
Common source
VDS
=
10 V
Pulse test
100°C
25°C
Ta
= −55°C
R
DS (ON)
– I
D
5
Common source
Ta
=
25°C
Pulse test
(S)
3
R
DS (ON)
(Ω)
Drain-source on resistance
3
Forward transfer admittance
⎪Y
fs
⎪
1
1
VGS
=
10 V
0.5
0.3
15 V
0.5
0.3
0.1
0.1
0.05
0.05
0.1
0.3
0.5
1
3
5
0.05
0.05
0.1
0.3
0.5
1
3
5
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2004-07-06
TPCS8004
R
DS (ON)
– Ta
(Ω)
1.2
Common source
1.0
Pulse test
0.65 A
ID
=
0.32 A
1.3 A
5
10
Common source
Ta
=
25°C
Pulse test
I
DR
– V
DS
R
DS (ON)
I
DR
(A)
Drain reverse current
3
0.8
Drain-source ON resistance
0
0.4
VGS
=
10 V
0.2
1
0.5
0.3
VGS
=
10 V
5V
0
−80
−40
0
40
80
120
160
0.1
−0.03 −0.05
3V
−0.1
−0.3 −0.5
0,
−1
V
−1
−3
Ambient temperature
Ta
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
Ciss
5
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
V
th
– Ta
V
th
(V)
Gate threshold voltage
4
(pF)
100
Coss
3
Capacitance
C
2
10
Crss
1
1
0.1
Common source
Ta
=
25°C
f
=
1MHz
VGS
=
0 V
1
10
100
0
−80
−40
0
40
80
120
160
Ambient temperature
Ta
(°C)
Drain-source voltage
V
DS
(V)
P
D
– Ta
2.0
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
160
Dynamic input/output characteristics
16
40
120
80
VDD
=
160 V
80
VGS
Common source
40
ID
=
1.3 A
Ta
=
25 °C
4
8
12
(W)
VDS (V)
1.6
(1)
P
D
Drain power dissipation
Drain-source voltage
0.8
(2)
0.4
0
0
40
80
120
160
200
0
0
4
8
12
16
0
Ambient temperature
Ta
(°C)
Total gate charge Q
g
(nC)
5
2004-07-06
Gate-source voltage
1.2
VGS
(V)
VDS
京公网安备 11010802033920号
EEWORLD
