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SMLJ58A-H

Description
ESD Suppressors / TVS Diodes 58volts 5uA 32 Amps Uni-Dir
CategoryDiscrete semiconductor    diode   
File Size243KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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SMLJ58A-H Overview

ESD Suppressors / TVS Diodes 58volts 5uA 32 Amps Uni-Dir

SMLJ58A-H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresPRSM-MIN
Maximum breakdown voltage71.2 V
Minimum breakdown voltage64.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
GuidelineIEC-61000-4-2, 4-4, 4-5
Maximum repetitive peak reverse voltage58 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
M
PL
IA
NT
Features
n
RoHS compliant*
n
Surface Mount SMC package
n
Standoff Voltage: 5.0 to 170 volts
n
Power Dissipation: 3000 watts
Applications
n
IEC 61000-4-2 ESD (Min. Level 4)
n
IEC 61000-4-4 EFT
n
IEC 61000-4-5 Surge
*R
oH
S
CO
LE
AD
F
RE
E
SMLJ Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown
Voltage up to 200 V. Typical fast response times are less than 1.0 ps for unidirectional devices and less than 5.0 ps for bidirectional devices
from 0 V to Minimum Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Steady State Power Dissipation @ TL = 75 °C
Maximum Instantaneous Forward Voltage @ I
PP
= 100 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
SMLJ5.0A ~ SMLJ90A
SMLJ100A ~ SMLJ170A
Symbol
P
PK
I
FSM
P
M(AV)
V
F
T
STG
T
J
Value
3000
300
5.0
3.5
5.0
Unit
Watts
Amps
Watts
Volts
°C
°C
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
-55 to +150
-55 to +150
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
How to Order
SMLJ 5.0 CA - H
Package
SMLJ = SMC/DO-214AB
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
Reel
(blank) = 13 inch reel
-H = 7 inch reel
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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