SM5A27
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
27 V
3600 W
5W
22 V
70 A
500 A
175 °C
Uni-directional
DO-218AB
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
D
V
WM
I
RSM
I
FSM
T
J
max.
Polarity
Package
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
Maximum working stand-off voltage
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
SYMBOL
P
PPM
P
D
I
RSM
V
WM
I
FSM
T
J
, T
STG
VALUE
3600
5.0
70
22.0
500
-55 to +175
UNIT
W
W
A
V
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V
BR
AT I
T
(V)
MIN.
SM5A27
24
MAX.
30
TEST CURRENT
I
T
(mA)
10
STAND-OFF VOLTAGE
V
WM
(V)
22
Revision: 23-Apr-14
Document Number: 88381
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5A27
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
Z
= 10 mA
I
PP
= 55 A
I
F
= 6.0 A
I
F
= 100 A
Rated V
WM
T
J
= 25 °C
T
J
= 175 °C
SYMBOL
V
ZTC
V
C
V
F (1)
I
R
MIN.
-
-
-
-
-
-
TYP.
-
-
-
0.95
-
-
MAX.
36
40.0
1.0
-
0.2
10.0
UNIT
mV/°C
V
V
μA
ADDITIONAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Zener voltage temperature coefficient
Clamping voltage for 10 μs/10 ms
exponentially decaying waveform
Instantaneous forward voltage
Reverse leakage current
Note
(1)
Measured on a 300 μs square pulse width
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
JC
VALUE
1.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM5A27HE3/2D
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
2.505
PREFERRED PACKAGE CODE
2D
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
3000
2500
Power Dissipation (W)
6.0
Load Dump Power (W)
2000
1500
1000
4.0
2.0
500
0
0
50
100
150
200
0
25
50
75
100
125
150
175
Case Temperature (°C)
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Revision: 23-Apr-14
Document Number: 88381
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5A27
www.vishay.com
Vishay General Semiconductor
100
150
Instantaneous Reverse Current (μA)
t
r
= 10 μs
Peak Value
I
PPM
Input Peak Pulse Current (%)
T
J
= 25 °C
Pulse Width (t
d
) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
10
T
J
= 175 °C
100
1
Half Value - I
PP
I
PPM
2
50
0.1
0.01
T
J
= 25 °C
0.001
t
d
0
0
10
20
30
40
0.0001
5
20
35
50
65
80
95
t - Time (ms)
Percentage of V
BR
(%)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Reverse Characteristics
10 000
100
Transient Thermal Impedance (°C/W)
Reverse
Surge
Power (W)
10
R
θJA
1
R
θJC
0.1
1000
10
100
0.01
0.01
0.1
1
10
100
Pulse Width (ms) - ½ I
PP
Exponential Waveform
t - Pulse Width (s)
Fig. 4 - Reverse Power Capability
Fig. 7 - Typical Transient Thermal Impedance
100
T
J
= 150 °C
10
1.0
T
J
= 25 °C
0.1
0.01
0.35
0.45
0.55
0.65
0.75
0.85
0.95
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Fig. 5 - Typical Instantaneous Forward Characteristics
Revision: 23-Apr-14
Document Number: 88381
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM5A27
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
Vishay General Semiconductor
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Lead 1
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 23-Apr-14
Document Number: 88381
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 08-Feb-17
1
Document Number: 91000
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