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KBPC1008G

Description
Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size123KB,1 Pages
ManufacturerDean Technology
Download Datasheet Parametric View All

KBPC1008G Overview

Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon

KBPC1008G Parametric

Parameter NameAttribute value
MakerDean Technology
package instructionS-XBFM-W4
Reach Compliance Codeunknown
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeS-XBFM-W4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum output current10 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current0.000005 µA
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
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