MHQ2907
MECHANICAL DATA
Dimensions in mm (inches)
4 HIGH SPEED, MEDIUM POWER, PNP
SWITCHING TRANSISTORS IN A
HERMETICALLY SEALED
14 LEADED CERDIP (J-PACK) PACKAGE
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HERMETIC PACKAGE
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
CERDIP-14 J-Pack
Hermetically sealed CERDIP Quad version
of the popular 2N2907. Suitable for High
Reliability applications
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
V
CEO
V
CBO
V
EBO
I
C
P
D
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Total Power Dissipation
Derate above 25°C
T
J
T
stg
Operating Junction Temperature
Storage Temperature
40V
60V
5V
600mA
1.9W
(0.65W per Transistor)
10.88mW/°C
(3.72mW/°C per Transistor)
-65°C to +200°C
-65°C to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4856
Issue 1
MHQ2907
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C unless otherwise stated)
Parameter
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
1
1
Test Conditions
I
C
= 10mA
I
C
= 10µA
I
E
= 10µA
V
CB
= 30V
V
CB
= 3.0V
V
CE
= 10V
I
C
= 150mA
I
C
= 300mA
I
C
= 150mA
I
C
= 300mA
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
E
= 0
I
C
= 10mA
I
C
= 150mA
I
C
= 300mA
I
B
= 15mA
I
B
= 30mA
I
B
= 15mA
I
B
= 30mA
Min.
40
60
5
Typ.
Max.
Unit
V
V
V
Collector – Emitter Breakdown Voltage
Collector –Base Breakdown Voltage
Emitter –Base Breakdown Voltage
Collector Cut-off current
Emitter Cut-off current
DC Current Gain
50
50
75
100
50
0.4
1.6
1.3
2.6
nA
nA
V
CE(sat)
V
BE(sat)
1)
1
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
V
V
1
Pulse Test: Pulse Width
≤
300µs, Duty Cycle = 2.0%
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
f
T
C
obo
C
ibo
t
on
t
off
Current Gain – Bandwidth Product
(f =100MHz)
Output Capacitance (f=1MHz)
Input Capacitance (f=1MHz)
Turn-On Time (I
B1
= 15mA)
Turn-Off Time (I
B1
– I
B2
= 15mA)
Test Conditions
I
C
= 50mA
V
CB
= 10V
V
BE
= 2V
V
CC
= 30V
V
CC
= 6V
V
CB
= 20V
I
E
= 0
I
C
= 0
I
C
= 150mA
I
C
= 150mA
Min.
200
Typ.
350
6.0
20
30
100
Max.
Unit
MHz
8.0
30
pF
pF
ns
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4856
Issue 1
MCU
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