BSR16
24 April 2015
60V, 600 mA, PNP switching transistor
Product data sheet
1. General description
PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
plastic package.
NPN complement: BSR14
2. Features and benefits
•
•
Single general-purpose switching transistor
AEC-Q101 qualified
3. Applications
•
Switching and linear amplification
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
V
CE
= -10 V; I
C
= -150 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
Conditions
open base
Min
-
-
100
Typ
-
-
-
Max
-60
-600
300
Unit
V
mA
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
B
E
C
base
emitter
collector
1
2
Simplified outline
3
Graphic symbol
C
B
E
sym132
TO-236AB (SOT23)
Nexperia
BSR16
60V, 600 mA, PNP switching transistor
6. Ordering information
Table 3.
Ordering information
Package
Name
BSR16
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
BSR16
[1]
T8%
% = placeholder for manufacturing site code
BSR16
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 April 2015
2 / 14
Nexperia
BSR16
60V, 600 mA, PNP switching transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
-60
-60
-5
-600
-800
-200
250
150
150
150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
single pulse; t
p
≤ 1 ms
-
-
T
amb
≤ 25 °C
[1]
-
-
-65
-65
Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
300
P
tot
(mW)
200
(1)
aaa-014677
100
0
-75
-25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; standard footprint
Fig. 1.
Power derating curve
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
BSR16
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 April 2015
3 / 14
Nexperia
BSR16
60V, 600 mA, PNP switching transistor
[1]
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
aaa-014479
10
3
Z
th
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.2
0.1
0.05
10
0.02
0.33
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 PCB; standard footprint.
Fig. 2.
Transient thermal impedance as a function of pulse time; typical values
BSR16
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 April 2015
4 / 14
Nexperia
BSR16
60V, 600 mA, PNP switching transistor
10. Characteristics
Table 7.
Symbol
I
CBO
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= -50 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= -50 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -0.1 mA; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -1 mA; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -10 mA; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -150 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
V
CEsat
collector-emitter
saturation voltage
I
C
= -150 mA; I
B
= -15 mA;
T
amb
= 25 °C
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
V
BEsat
base-emitter saturation I
C
= -150 mA; I
B
= -15 mA;
voltage
T
amb
= 25 °C
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
t
d
t
r
t
on
t
s
t
f
t
off
C
C
C
E
f
T
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance
emitter capacitance
transition frequency
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
EB
= -2 V; I
C
= 0 A; i
c
= 0 A; f = 1 MHz;
T
amb
= 25 °C
V
CE
= -20 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
200
-
-
MHz
-
-
30
pF
I
C
= -150 mA; I
Bon
= -15 mA;
I
Boff
= 15 mA; T
amb
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
30
40
300
65
365
8
ns
ns
ns
ns
ns
ns
pF
-
-
-
-
-1.3
-2.6
V
V
-
-
-1.6
V
-
-
-400
mV
50
-
-
Min
-
-
-
75
100
100
100
Typ
-
-
-
-
-
-
-
Max
-10
-10
-50
-
-
-
300
Unit
nA
µA
nA
I
EBO
h
FE
BSR16
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 April 2015
5 / 14
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