BAV102; BAV103
Single general-purpose switching diodes
Rev. 4 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Single general-purpose switching diodes, fabricated in planar technology, and
encapsulated in small hermetically sealed glass SOD80C Surface-Mounted
Device (SMD) packages.
Table 1.
Product overview
Package
NXP
BAV102
BAV103
SOD80C
JEITA
-
single
Configuration
Type number
1.2 Features and benefits
High switching speed: t
rr
≤
50 ns
Low leakage current
Low capacitance: C
d
≤
5 pF
Small hermetically sealed glass
SMD package
1.3 Applications
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
Quick reference data
Parameter
forward current
reverse voltage
BAV102
BAV103
t
rr
[1]
[2]
[3]
Conditions
[1][2]
Min
-
-
-
[3]
Typ
-
-
-
-
Max
250
150
200
50
Unit
mA
V
V
ns
reverse recovery time
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
k
a
1
2
006aab040
[1]
The marking band indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
BAV102
BAV103
-
Description
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
Type number
4. Marking
Table 5.
BAV102
BAV103
Marking codes
Marking code
marking band
marking band
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
Parameter
repetitive peak reverse
voltage
BAV102
BAV103
V
R
reverse voltage
BAV102
BAV103
I
F
I
FRM
I
FSM
forward current
repetitive peak forward
current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 100
μs
t
p
= 1 s
BAV102_BAV103
All information provided in this document is subject to legal disclaimers.
Conditions
Min
Max
Unit
-
-
-
-
[1][2]
200
250
150
200
250
625
V
V
V
V
mA
mA
-
-
[3]
-
-
-
9
3
1
A
A
A
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 6 August 2010
2 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[2]
Min
-
-
−65
−65
Max
400
175
+175
+175
Unit
mW
°C
°C
°C
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
= 25
°C
prior to surge.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-t)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
375
300
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
BAV102
BAV103
C
d
t
rr
[1]
[2]
Conditions
[1]
Min
-
-
-
-
-
-
-
[2]
Typ
-
-
-
-
-
-
-
-
Max
1.0
1.25
100
100
100
100
5
50
Unit
V
V
nA
μA
nA
μA
pF
ns
V
R
= 150 V
V
R
= 150 V; T
j
= 150
°C
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0 V
diode capacitance
reverse recovery time
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
-
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
BAV102_BAV103
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 6 August 2010
3 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
600
I
F
(mA)
mbg459
10
2
I
FSM
(A)
10
mbg703
400
(1)
(2)
(3)
200
1
0
0
1
V
F
(V)
2
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
amb
= 150
°C;
typical values
(2) T
amb
= 25
°C;
typical values
(3) T
amb
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
mgd009
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mgd005
10
3
I
R
(μA)
10
2
1.6
C
d
(pF)
1.4
10
1.2
1
1.0
10
−1
10
−2
0
100
T
j
(°C)
200
0.8
0
10
V
R
(V)
20
V
R
= V
Rmax
Solid line: maximum values
Dotted line: typical values
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAV102_BAV103
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 6 August 2010
4 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
300
I
F
(mA)
200
mbh278
300
V
R
(V)
(1)
mgl588
200
(2)
100
100
0
0
100
T
amb
(°C)
200
0
0
100
T
amb
(°C)
200
FR4 PCB, standard footprint
FR4 PCB, standard footprint
(1) BAV103
(2) BAV102
Fig 5.
Forward current as a function of ambient
temperature; derating curve
Fig 6.
Reverse voltage as a function of ambient
temperature; derating curve
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Fig 7.
Reverse recovery time test circuit and waveforms
BAV102_BAV103
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 6 August 2010
5 of 11
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