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AQV221NAX

Description
DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX
CategoryLED optoelectronic/LED   
File Size49KB,4 Pages
ManufacturerNais ( Matsushita Electric Works )
Websitehttp://www.nais-e.com/
Download Datasheet Parametric Compare View All

AQV221NAX Overview

DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX

AQV221NAX Parametric

Parameter NameAttribute value
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionDIP-6
EU RoHS regulationsYes
stateActive
Optoelectronic device typeTRANSISTOR OUTPUT SSR
structureSINGLE WITH BUILT-IN DIODE
forward_current_max0.0500 A
Maximum insulation voltage1500 V
Number of components2
_state_current_max0.0800 A
On-state resistance35 ohm
terminal coatingNOT SPECIFIED
BSI
pending
RF (Radio Frequency) Type
Low C and R
PhotoMOS
RELAYS
TYPICAL APPLICATIONS
Measuring and testing equipment
1. Testing equipment for semiconductor
performance
IC tester, Liquid crystal driver tester,
semiconductor performance tester
2. Board tester
Bear board tester, In-circuit tester,
function tester
3. Medical equipment
Ultrasonic wave diagnostic machine
4. Multi-point recorder
(warping, thermo couple)
FEATURES
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.6±0.2
.142±.008
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.9±0.2
.154±.008
mm
inch
1
2
3
6
5
4
1. Low output capacitance between
output terminals and low ON-resis-
tance
2. High speed switching (Turn on time:
typ. 200
µ
s)
3. High sensitivity
Control loads up to 250mA with input cur-
rent 5mA
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, where as this
PhotoMOS relay has only 20pA (typical)
even with the rated load voltage
5. Controls low-level analog signals
PhotoMOS relays features extremely low-
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion
6. Low thermal electromotive force
(Approx. 1
µ
V)
TYPES
Part No.
Output rating*
Type
Load
voltage
Load
current
Through hole
terminal
Tube packing style
Surface-mount terminal
Tape and reel packing style
Picked from the
Picked from the
1/2/3-pin side
4/5/6-pin side
AQV221NAX
AQV221NAZ
Packing quantity
Tube
1 tube contains
50 pcs.
1 batch contains
500 pcs.
Tape and reel
AC/DC type
40 V
150 mA
AQV221N
AQV221NA
1,000 pcs.
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C
77
°
F)
Item
LED forward current
LED reverse voltage
Peak forward current
Power dissipation
Load voltage (peak AC)
Continuous load current
Type of
Symbol connec-
tion
I
F
V
R
I
FP
P
in
V
L
I
L
I
peak
P
out
P
T
V
iso
T
opr
T
stg
A
B
C
AQV221N(A)
50 mA
3V
1A
75 mW
40 V
0.15 A
0.18 A
0.25 A
0.45 A
360 mW
410 mW
1,500 V AC
–40
°
C to +85
°
C
–40
°
F to +185
°
F
–40
°
C to +100
°
C
–40
°
F to +212
°
F
Remarks
Input
f = 100 Hz, Duty factor = 0.1%
Output
A connection: Peak AC, DC
B, C connection: DC
A connection: 100 ms (1 shot), V
L
= DC
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Operating
Temperature
limits
Storage
Non-condensing at low temperatures
145

AQV221NAX Related Products

AQV221NAX AQV221 AQV221N AQV221NA AQV221NAZ
Description DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 1500 V ISOLATION-MAX
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel
Processing package description DIP-6 DIP-6 DIP-6 DIP-6 DIP-6
EU RoHS regulations Yes Yes Yes Yes Yes
state Active Active Active Active Active
Optoelectronic device type TRANSISTOR OUTPUT SSR TRANSISTOR OUTPUT SSR TRANSISTOR OUTPUT SSR TRANSISTOR OUTPUT SSR TRANSISTOR OUTPUT SSR
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
forward_current_max 0.0500 A 0.0500 A 0.0500 A 0.0500 A 0.0500 A
Maximum insulation voltage 1500 V 1500 V 1500 V 1500 V 1500 V
Number of components 2 2 2 2 2
_state_current_max 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A
On-state resistance 35 ohm 35 ohm 35 ohm 35 ohm 35 ohm
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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