EB02
ABSOLUTE MAXIMUM RATINGS
MOTOR VOLTAGE SUPPLY, HV
OUTPUT CURRENT, peak
OUTPUT CURRENT, continuous
1
GATE SUPPLY VOLTAGE, Vcc
LOGIC SUPPLY VOLTAGE, Vdd
POWER DISSIPATION, internal
1
LOGIC INPUT VOLTAGE
THERMAL RESISTANCE TO CASE
3
TEMPERATURE, pin solder, 10s
TEMPERATURE, junction
2
TEMPERATURE RANGE, storage
OPERATING TEMPERATURE, case
TEST CONDITIONS
I
OUT
=10A; V
cc
=10.8V, V
dd
=5V;
HV=100V, Fpwm=50kHz, L=100 µH
"
"
"
"
"
Set by external circuitry
Set by internal resistors
MIN
99.2
-1.5
TYP
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
SPECIFICATIONS
PARAMETER
POSITIVE OUTPUT VOLTAGE
NEGATIVE OUTPUT VOLTAGE
POSITIVE EDGE DELAY
RISETIME
NEGATIVE EDGE DELAY
FALLTIME
PWM FREQUENCY
INPUT IMPEDANCE
100V
20A
10A
20V
20V
51 Watts
-0.3V to V
dd
+ 0.3V
2.1°C/Watt
300°C
150°C
–55 to +150°C
–25 to +85°C
MAX
101.5
.8
260
50
310
5 0
50
50
UNITS
Volts
Volts
n-second
n-second
n-second
n-second
kHz
k-ohm
INPUT AND OUTPUT SIGNALS
PIN
1
2
3
4
5
6
7
8
9
10
11
12
NOTES: 1.
2.
3.
SYMBOL
V
cc
3
Lin3
Hin3
V
dd
V
cc
2
Lin2
V
ss
Hin2
V
cc
1
Lin1
SD
Hin1
FUNCTION
Gate supply 3
Low drive logic in 3
High drive logic in 3
Logic supply
Gate supply 2
Low drive logic in 2
Signal ground
High drive logic in 2
Gate supply 1
Low drive logic in 1
Shut down logic in
High drive logic in 1
PIN
13
14
15
16
17
18
19
20
21
22
23
24
SYMBOL
HV1
OUT1
S1
HVRTN1
HV2
OUT 2
S2
HVRTN2
HV3
OUT 3
S3
HVRTN 3
FUNCTION
High Voltage supply 1
Section 1 output
Section 1 source
Section 1 return
High voltage supply 2
Section 2 output
Section 2 source
Section 2 return
High voltage supply 3
Section 3 output
Section 3 source
Section 3 return
Over full operating temperature range.
Long term operation at the maximum junction temperature will result in reduced product life. Lower internal temperature by
reducing internal dissipation or using better heatsinking to achieve high MTTF.
Each FET.
INPUT
A logic level input independently controls each FET in
the half bridge. A logic level high turns on the FET and
low turns it off. A common shut down input turns off all
FETs when high.
All inputs are Schmitt triggers with the upper threshold at
2/3 V
dd
and the lower threshold at 1/3 V
dd
. This comfortably
interfaces with CMOS or HCMOS provided that the Vdd for
the logic family and the EB02 are the same.
TTL families may be used if a pull-up to Vcc is added to
the TTL gates driving the EB02, and Vdd for the EB02 is the
same supply as V
cc
for the TTL family.
An open signal connector pulls the shut down input high and
all other inputs low, insuring that all outputs are off.
However, input impedance is 50k on all inputs; therefore, if
one input is open circuited a high radiated noise level could
spuriously turn on a FET.
OUTPUT
Each output section consists of a switching mode FET half
bridge. Separate HV supply, emitter, and HV return lines are
provided for each section.
The FETs are conservatively rated to carry 10A. At 10A
the saturation voltage is 1.5 V maximum, over the full
environmental range.
Each FET has an intrinsic diode connected in anti-parallel.
When switching an inductive load this diode will conduct,
and the drop at 10A will be 1.5V maximum, over the full
environmental range.
APEX MICROTECHNOLOGY CORPORATION
• 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
2
OPERATING
CONSIDERATIONS
EB02
current. (The size of the antenna.) Therefore, the 1µF
ceramic capacitors should bypass each HV to its return at
the pins of the EB02.
POWER SUPPLY REQUIREMENTS
SUPPLY
HV1
HV2
HV3
V
cc
1
V
cc
2
V
cc
3
V
dd
VOLTAGE
10V to 100V
10V to 100V
10V to 100V
10V to 20V
10V to 20V
10V to 20V
4.5 to 20V
MAX CURRENT
10A, continuous, 20A peak
10A, continuous, 20A peak
10A, continuous, 20A peak
10mA
10mA
10mA
10mA
SHOOT THROUGH PROTECTION
Power FETs have a relatively short turn on delay, and a
long turn off delay. Therefore, if the turn on input to an FET in
a half bridge circuit is applied simultaneously with the turn off
input to the other FET in that half bridge, there will be a time
when both FETs are simultaneously on. This "shoot through
condition" will short the power rails through the FETs, causing
excessive power dissipation and very high EMI.
To avoid the shoot through condition the turn on of one FET
must be delayed long enough for the other FET in the same
half bridge to have completely turned off.
A delay of at least 0.5 µ-seconds is required for the EB02.
This delay is required for both the Hin and Lin inputs.
HV1, HV2, and HV3 may be used independently, or may
be one supply. Also V
cc
1, V
cc
2, and V
cc
3 may be used
independently or tied together. The V
dd
supply must be
compatible with the input logic. If a high voltage logic such as
CMOS is used it may be tied with the V
cc
supplies. HCMOS
requires a 5V±10% supply
SPECIAL CONSIDERATIONS
GENERAL
The EB02 is designed to give the user maximum flexibility
in a digital or DSP based motion control system. Thermal,
overvoltage, overcurrent, and crossfire protection circuits are
part of the user’s design.
Users should read Application Note 1, "General Operating
Considerations;” and Application Note 30, “PWM Basics”
for much useful information in applying this part. These
Application Notes are in the “Power Integrated Circuits Data
Book” and on line at www.apexmicrotech.com.
PROTECTION CIRCUITS
The EB02 does not include protection circuits.
However, there is a shut down input which will turn off all
FETs when at logic “1”. This input may be used with user
designed temperature sensing and current sensing circuits
to shut down the FETs in the event of a detected unsafe
condition. This is recommended since the FETs may be
turned off this way even if the normal input logic or DSP
programming is faulty.
START UP CONSIDERATIONS
The lower rail FET in the half bridge must be turned on
for at least 2 µ-seconds to charge the bootstrap capacitor
before the top rail FET can be turned on. This must be done
no more than 330 µ-seconds prior to turning on the top rail
FET. However, a grounded load will give the same purpose
as turning on the lower rail FET. However a grounded load
will give the same purpose as turning on the lower rail
FET. Therefore a grounded load may be operated without
this consideration.
An internal floating supply is used to enhance the operation
of the bootstrap bias circuit. This allows the top rail FETs to
be held on indefinitely once turned on.
GROUNDING AND BYPASSING
As in any high power PWM system, grounding and
bypassing are some of the keys to success. The EB02 is
capable of generating 2 kW pulses with 40 n-second rise and
fall times. If improperly grounded or bypassed this can cause
horrible conducted and radiated EMI.
In order to reduce conducted EMI, the EB02 provides a
separate power ground, named HVRTN, for each high voltage
supply. These grounds are electrically isolated from the logic
ground and each other. This isolation eliminates high current
ground loops. However, more than 5V offset between the
grounds will destroy the EB02. Apex recommends back
to back high current diodes between logic and power
grounds; this will maintain isolation but keep offset at a
safe level. All grounds should tie together at one common
point in the system.
In order to reduce radiated EMI, Apex recommends a 100
µF or larger capacitor between HV and HVRTN. This capacitor
should be a switching power grade capacitor with ESR rated
at 20kHz. This capacitor should be placed physically as close
to the EB02 as possible.
However, such a capacitor will typically have a few
hundred milli-ohms or so ESR. Therefore, each section
must also be bypassed with a low ESR 1µF or larger
ceramic capacitor.
In order to minimize radiated noise, it is necessary to
minimize the area of the loop containing high frequency
HEATSINK
The EB02 should be provided with sufficient heatsink to
dissipate 51 watts when operating at 100V, 10A, 50kHz and 3
sections simultaneously providing maximum current.
The dissipation is composed of conduction losses (I
out
xV
sat
)
up to 16 watt per half bridge and switching losses of about 1
watt per half bridge. The conduction losses are proportional
to I
out
; switching losses are proportional to HV supply voltage,
load capacitance, and switching frequency.
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specificiations are subject to change without notice.
APEX MICROTECHNOLOGY CORPORATION
• 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
EBO2U REV. B JANUARY 2001 © 2001 Apex Microtechnology Corporation
4
PCB Design
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