TYPICAL PERFORMANCE CURVES
®
1200V
APT25GN120B_S(G)
APT25GN120B
APT25GN120S
APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B)
TO
-2
47
D
3
PAK
C
G
E
(S)
G
C
E
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
•
1200V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT25GN120B(G)
UNIT
Volts
1200
±30
67
33
75
75A @ 1200V
272
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 150µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
5
1.4
2
2
5.8
1.7
1.9
6.5
2.1
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
R
G(int)
100
TBD
600
8
Gate-Emitter Leakage Current (V
GE
= ±20V)
Integrated Gate Resistor
nA
Ω
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7600
Rev D
11-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT25GN120B_S(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
CE
= 600V
I
C
= 150A
T
J
= 150°C, R
G
= 4.3Ω
7
,
V
GE
=
15V, L = 100µH,V
CE
= 1200V
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 150A
V
GE
= 15V
MIN
TYP
MAX
UNIT
pF
V
nC
1800
105
85
9.5
155
10
85
75
22
17
280
135
TBD
1490
2150
22
17
335
225
TBD
2390
3075
m
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
4
55
4
5
R
G
= 1.0Ω
7
Turn-on Switching Energy (Diode)
6
T
J
= +25°C
m
J
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 150A
Turn-on Switching Energy (Diode)
66
T
J
= +125°C
R
G
= 1.0Ω
7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.46
N/A
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
11-2005
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7600
Rev D
TYPICAL PERFORMANCE CURVES
80
70
I
C
, COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
80
70
I
C
, COLLECTOR CURRENT (A)
APT25GN120B_S(G)
15V
15V
12V
11V
60
50
40
30
20
10
0
12V
11V
10V
9V
8V
7V
10V
9V
8V
7V
75
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
5
10
15
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 25A
C
T = 25°C
J
0
5
10
15
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
60
V
CE
= 240V
V
CE
= 600V
V
CE
= 960V
T
J
= 125°C
45
T
J
= 25°C
30
8
6
4
2
0
T
J
= -55°C
15
0
0
2
4
6
8
10
12
14
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
20
40
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
3.5
3
2.5
2
1.5
1.0
0.5
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 50A
2.5
2
I
C
= 50A
I
C
= 25A
I
C
= 25A
1.5
1
0.5
I
C
= 12.5A
I
C
= 12.5A
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
8
-25
0
25
50
75 100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
0
-50
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
80
70
60
50
40
11-2005
050-7600
Rev D
30
20
10
1.05
1.00
0.95
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50
30
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
25
20
15
10
5
T = 25°C
, or
125°C
J
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
V
CE
= 800V
R
G
= 4.3Ω
L = 100µH
350
300
250
200
150
100
50
0
V
CE
=
800V
R
G
=
4.3Ω
L = 100µH
V
GE
=15V,T
J
=25°C
APT25GN120B_S(G)
V
GE
=15V,T
J
=125°C
V
GE
= 15V
0
10
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
250
R
G
=
4.3Ω, L
=
100
µ
H, V
CE
=
800V
45
40
35
R
G
=
4.3Ω, L
=
100
µ
H, V
CE
=
800V
25
20
15
10
5
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
T
J
=
25 or 125°C,V
GE
=
15V
t
f,
FALL TIME (ns)
t
r,
RISE TIME (ns)
30
200
150
100
50
0
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
0
10 15 20 25 30 35 40
45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
7000
7000
E
ON2
, TURN ON ENERGY LOSS (µJ)
6000
5000
4000
3000
2000
1000
0
E
OFF
, TURN OFF ENERGY LOSS (µJ)
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
G
6000
5000
4000
3000
2000
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
G
T
J
=
125°C
T
J
=
125°C
T
J
=
25°C
T
J
=
25°C
1000
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
7000
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
G
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
14000
SWITCHING ENERGY LOSSES (µJ)
12000
10000
8000
6000
4000
2000
0
0
SWITCHING ENERGY LOSSES (µJ)
V
= 800V
CE
V
= +15V
GE
T = 125°C
J
E
on2,
50A
E
off,
50A
6000
5000
4000
3000
2000
1000
0
0
E
off,
50A
E
on2,
50A
E
off,
25A
E
on2,
25A
E
off,
12.5A
E
on2,
12.5A
11-2005
E
off,
25A
E
on2,
25A
E
off,
12.5A
E
on2,
12.5A
Rev D
050-7600
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000
I
C
, COLLECTOR CURRENT (A)
C
ies
80
70
60
50
40
30
20
10
APT25GN120B_S(G)
C, CAPACITANCE ( F)
1,000
500
P
100
50
C
oes
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0
200 400 600 800 1000 1200 1400
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.50
D = 0.9
0.40
0.7
0.30
0.5
0.20
0.3
0.10
0.1
0
0.05
10
-5
10
-4
SINGLE PULSE
Note:
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
PDM
t1
t2
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140
F
MAX
, OPERATING FREQUENCY (kHz)
100
RC MODEL
Junction
temp. (°C)
0.0536
Power
(watts)
0.169
Case temperature. (°C)
0.353
0.00826
50
F
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= 800V
CE
R = 4.3Ω
G
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25
30 35 40 45
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
5
10
050-7600
Rev D
11-2005
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