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APT40GP90B2DQ2G

Description
POWER MOS 7 IGBT
CategoryDiscrete semiconductor    The transistor   
File Size440KB,9 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Environmental Compliance
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APT40GP90B2DQ2G Overview

POWER MOS 7 IGBT

APT40GP90B2DQ2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerADPOW
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)101 A
Collector-emitter maximum voltage900 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)220 ns
Nominal on time (ton)37 ns
TYPICAL PERFORMANCE CURVES
®
APT40GP90B2DQ2
APT40GP90B2DQ2G*
APT40GP90B2DQ2(G)
900V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
T-Max
®
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA Rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
7
All Ratings: T
C
= 25°C unless otherwise specified.
APT40GP90B2DQ2(G)
UNIT
Volts
900
±30
@ T
C
= 25°C
101
50
160
160A @ 900V
543
-55 to 150
300
Watts
°C
Amps
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 350µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
900
3
4.5
3.2
2.7
350
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 900V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
µA
nA
9-2005
050-7491
Rev A
Collector Cut-off Current (V
CE
= 900V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
1500
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT40GP90B2DQ2G Related Products

APT40GP90B2DQ2G APT40GP90B2DQ2
Description POWER MOS 7 IGBT POWER MOS 7 IGBT
Is it Rohs certified? conform to incompatible
Maker ADPOW ADPOW
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 101 A 101 A
Collector-emitter maximum voltage 900 V 900 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 220 ns 220 ns
Nominal on time (ton) 37 ns 37 ns
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