These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT300SK120D3 – Rev 0 January, 2004
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
Max ratings
1200
440
300
750
±20
1250
Unit
V
A
APTGT300SK120D3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
V
GE(th)
I
GES
Symbol
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, I
C
= 12mA
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
= 15V
I
C
= 300A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 12mA
V
GE
= 20V, V
CE
= 0V
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 300A
R
G
= 2.2Ω
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 300A
R
G
= 2.2Ω
Min
1200
Typ
Max
8
2.1
6.5
800
Unit
V
mA
V
V
nA
5.0
1.7
2.0
5.8
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
20
1.2
1
250
90
550
130
300
100
650
180
Max
Unit
nF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic
V
F
E
rec
Q
rr
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Test Conditions
I
F
= 300A
V
GE
= 0V
I
F
= 300A
V
R
= 600V
di/dt =900A/µs
I
F
= 300A
V
R
= 600V
di/dt =900A/µs
Min
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Typ
1.6
1.6
24
28
56
Max
2.1
Unit
V
mJ
µC
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
For terminals
Mounting torque
To Heatsink
Package Weight
IGBT
Diode
Min
Typ
2500
-40
-40
-40
3
3
150
125
125
5
5
380
V
°C
N.m
g
M6
M6
APT website – http://www.advancedpower.com
2-3
APTGT300SK120D3 – Rev 0 January, 2004
Max
0.1
0.15
Unit
°C/W
APTGT300SK120D3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
京公网安备 11010802033920号
EEWORLD
