Bulletin I2115 rev. D 12/98
SAFE
IR
Series
16TTS..
PHASE CONTROL SCR
V
T
Description/Features
The 16TTS..
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
< 1.4V @ 10A
I
TSM
= 200A
V
RRM
= 800 to 1600V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
13.5
Three-phase Bridge Units
17
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
range
@ 10 A, T
J
= 25°C
16
up to 1600
200
1.4
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
16TTS..
10
TO-220AC
Also available in SMD-220 package (series 16TTS..S)
www.irf.com
1
16TTS..
SAFE
IR
Series
Bulletin I2115 rev. D 12/98
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
16TTS08
16TTS12
16TTS16
800
1200
1600
V
DRM
, maximum
peak direct voltage
V
800
1200
1600
I
RRM
/
I
DRM
125°C
mA
10
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
I
TSM
2
16TTS..
10
16
170
200
144
200
Units
A
Conditions
@ T
C
= 98° C, 180° conduction half sine wave
Max. RMS On-state Current
Max.Peak One Cycle Non-Repetitive
Surge Current
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A s
2
I t
Max. I t for fusing
2
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
2000
1.4
24.0
1.1
0.5
10
Typ.
--
100
Max.
100
150
A
2
√s
V
mΩ
V
mA
t = 0.1 to 10ms, no voltage reapplied
@ 10A, T
J
= 25°C
T
J
= 125°C
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
Holding Current
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/ V
DRM
Anode Supply = 6V, Resistive load, Initial I
T
=1A
mA
16TTS08, 16TTS12
16TTS16
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load
I
L
Max. Latching Current
200
500
150
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
2
www.irf.com
16TTS..
SAFE
IR
Series
Bulletin I2115 rev. D 12/98
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
16TTS..
8.0
2.0
1.5
10
90
60
35
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
3.0
2.0
1.0
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.2
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
16TTS..
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
16TTS..
- 40 to 125
- 40 to 125
1.3
62
0.5
2 (0.07)
Min.
Max.
6 (5)
12 (10)
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
°C/W
DCoperation
Mountingsurface,smoothandgreased
g (oz.)
Kg-cm
(Ibf-in)
Case Style
TO-220AC
www.irf.com
3
16TTS..
SAFE
IR
Series
Bulletin I2115 rev. D 12/98
Maximum Allowable Case Temperature (°C)
120
115
110
105
100
95
90
0
2
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case Temperature (°C)
125
125
120
115
Conduction Period
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
Conduction Angle
110
105
100
95
90
0
2
4
6
8
10
12
14
16
Average On-state Current (A)
30°
30°
60°
90°
120°
180°
4
6
8
10
12
60°
90°
120°
180° DC
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Max imum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
25
DC
180°
120°
90°
60°
30°
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
20
15
RMS Limit
10
Conduction Period
16TTS.. Series
T
J
= 125°C
5
16TTS.. Series
T
J
= 125°C
0
2
4
6
8
10
12
14
16
18
0
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
200
180
160
140
120
100
180
160
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
140
120
100
16TTS..Series
80
1
10
100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
16TTS.. Series
80
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
4
www.irf.com
16TTS..
SAFE
IR
Series
Bulletin I2115 rev. D 12/98
1000
Instantaneous On-state Current (A)
16TTS.. Series
100
10
T = 25°C
J
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
Steady State Value
(DC Operation)
1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
Single Pulse
16TTS.. Series
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
16TTS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
