HFT150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HFT150-28
is Designed for
.112x45°
A
L
PACKAGE STYLE .500 4L FLG
FEATURES:
•
P
G
= 16 dB min. at 150 W/30 MHz
•
IMD
3
= -28 dBc max. at 150 W
(PEP)
•
Omnigold™
Metalization System
FULL R
Ø.125 NOM.
C
B
E
H
D
G
F
K
I J
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
O
DIM
A
B
C
D
E
F
MINIMUM
inches / mm
MAXIMUM
inches / mm
16 A
65 V
±
40 V
300 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
0.60
O
C/W
O
O
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
G
H
I
J
K
L
ORDER CODE: ASI10616
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS
V
DS
G
FS
C
ISS
C
OSS
C
RSS
P
IN
G
PS
η
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
T
C
= 25
O
C
NONETEST
CONDITIONS
I
DS
= 100 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 100 mA
I
D
= 10 A
I
D
= 5 A
MINIMUM TYPICAL MAXIMUM
65
---
---
1.0
---
3.5
---
---
---
---
---
---
375
188
26
---
0.5
1.0
5.0
1.5
---
---
UNITS
V
mA
µ
A
V
V
mho
pF
V
GS
= 28 V
V
DS
= 0 V
F = 1.0 MHz
---
V
DD
= 28 V
f = 175 MHz
I
DQ
= 250 mA
P
OUT
= 150 W
(PEP)
50
15
10
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ADI Reference Circuit
京公网安备 11010802033920号
EEWORLD
