Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to
allow positive biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device design
easy.
• Structure
PNP digital transistor (with built-in resistors)
•Equivalent circuit
(1)
DTC114EKA
DTC114ECA
2.9 + 0.2
1.9+ 0.2
0.95+0.95
(2)
2.8+ 0.2
+ 0.2
- 0.1
1.1
+ 0.2
- 0.1
0.8 + 0.1
0 ~ 0.1
R2
GND(+)
0.4
+ 0.1
- 0.05
0.15
+ 0.1
- 0.06
0.3 ~ 0.6
IN
R1
OUT
(3)
(1) GND
(2) IN
(3) OUT
All terminals have same dimensions
1.6
IN
OUT
GND(+)
DTA114EKA
EIAJ: SC— 59
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(1)
(2)
2.4+ 0.2
+ 0.2
- 0.1
0.95
+ 0.2
- 0.1
0.45 + 0.1
0 ~ 0.1
(3)
0.15
-
+ 0.1
0.06
1.3
0.2Min
+ 0.1
- 0.05
0.4
(1) GND
(2) IN
(3) OUT
All terminals have same dimensions
DTA114ECA
EIAJ: SOT—23
•
Absolute maximum ratings(T
a
=25 °C)
Parameter
symbol
V
V
cc
IN
limits
–50
–10~+40
50
100
200
150
–55~+150
unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
I
O
I
C(Max.)
P
d
T
j
T
stg
P11–1/2
DTC114EKA DTC114ECA
•
Elecrical characteristics(T =25°C)
a
Parameter
Input voltage
Output Voltage
Input current
Output current
symbol
V
I(off)
Min.
—
3
—
—
—
30
7
0.8
—
Typ.
—
—
0.1
—
—
—
10
1
250
Max.
0.5
—
0.3
0.88
0.5
—
13
1.2
—
Unit
V
V
mA
Conditions
V
CC
= 5V,I
O
= 100
µ
A
V
O
= 0.3V,I
O
= 10mA
I
O
/ I
I
= 10mA / 0.5mA
V
I
= 5V
V
CC
V
I(on)
V
O(on)
I
I
I
O(off)
µ
A
—
KΩ
—
MHz
= 50V,V
I
= 0 V
DC current gain
G
I
Input resistance
R
1
Resistance ratio
R
2
/ R
1
Transition frequency
f
T
*Transition frequency of the device
V
O
= 5V, I
O
= 5mA
—
—
V
CE
= 10V, I
E
= –5mA, f=100MHz*
ELECTRICAL CHARACTERISTIC CURVES
-100
-50
V
O
= – 0.3V
-10m
-5m
V
T
A
= 100°C
25°C
–40°C
CC
=–5V
INPUT VOLTAGE: V
I(on)
( V )
-20
-10
-5
-2
OUTPUT CURRENT: I
O
( A )
-2m
-5m
-10m -20m
-50m -100m
-2m
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
T
A
= –40°C
25°C
100°C
-1
-0.5
-0.2
-0.1
-100µ-200µ
-500µ -1m
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
OUTPUT CURRENT: I
O
(A)
INPUT VOLTAGE: V
I(ON)
(V)
Figure 1. Input voltage vs.output current
(ON characteristics)
Figure 2. Output current vs.input voltage
(OFF characteristics)
-1
1K
500
200
V
O
= – 5 V
-0.5
I
O
/ I
I
= 20
T
A
= 100°C
25°C
–40°C
OUTPUT VOLTAGE: V
O(on)
( V )
DC CURRENT GAIN: G
I
T
A
= 100°C
25°C
–40°C
-0.2
100
50
20
-0.1
-0.05
-0.02
10
5
2
1
-100µ-200µ
-500µ -1m
-2m
-5m
-10m -20m
-50m -100m
-0.01
-.005
-.002
-.001
-100µ-200µ
-500µ -1m
-2m
-5m
-10m -20m
-50m -100m
OUTPUT CURRENT: I
O
(A)
OUTPUT CURRENT: I
O
(A)
Figure 3. DC current gain vs.output current
Figure 4. Output voltage vs.output current
P11–2/2
Embedded System
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