NPN RF Amplifier Transistors
Surface Mount
COLLECTOR
3
MSC2295-BT1
MSC2295-CT1
3
1
2
BASE
1
EMITTER
CASE
2
318D–03, STYLE1
SC–59
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Symbol
P
D
T
J
T
stg
Value
30
20
5.0
30
Max
200
150
-55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
Symbol
I
CBO
h
FE
MSC2295-BT1
MSC2295-CT1
f
T
C
re
70
110
150
—
140
220
—
1.5
Min
—
Max
0.1
Unit
µAdc
—
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Characteristic
Collector-Base Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
DC Current Gain
(1)
(V
CB
= 10 Vdc, I
C
= –1.0 mAdc)
Collector-Gain - Bandwidth Product
(V
CB
= 10 Vdc, I
E
= –1.0 mAdc)
Reverse Transistor Capacitance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 10.7 MHz)
1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
MHz
pF
DEVICE MARKING
Marking Symbol
VBX
MSC2295-BT1
VCX
MSC2295-CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N4–1/1
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