DMN5L06
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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Single N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
Mechanical Data
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SOT-23
NEW PRODUCT
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
G
Source
S
Equivalent Circuit
TOP VIEW
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
I
DM
Value
50
50
±20
±40
280
1.5
Units
V
V
V
mA
A
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
d
R
θ
JA
T
j,
T
STG
Value
350
357
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
V
SD
C
iss
C
oss
C
rss
Min
50
⎯
⎯
0.49
⎯
⎯
0.5
200
0.5
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
1.6
2.2
1.0
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.1
500
±20
1.2
3
4
⎯
⎯
1.4
50
25
5.0
Unit
V
µA
nA
V
Ω
A
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 2.7V, I
D
= 0.2A,
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
4. Short duration pulse test used to minimize self-heating effect.
DMN5L06
Document number: DS30614 Rev. 4 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated
DMN5L06
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
8V
6V
5V
4V
3V
8V
10V
6V
5V
4V
0.9
3V
NEW PRODUCT
0.6
0.3
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
0
-50 -25
0
25 50 75 100 125 150
T
ch
, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
1
0.1
I
D,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
1
I
D
, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
V
GS,
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
DMN5L06
Document number: DS30614 Rev. 4 - 2
2 of 4
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R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
October 2007
© Diodes Incorporated
DMN5L06
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (
Ω
)
I
DR
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
Pulsed
T
A
= 150
°
C
NEW PRODUCT
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -25
°
C
T
A
= -55
°
C
T
ch
, CHANNEL TEMPERATURE (
°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
1
|Y
fs
|, FORWARD TRANSFER ADMITTANCE (S)
1
I
D
, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
500
400
300
200
100
R
θJA
= 357°C/W
P
d
, POWER DISSIPATION (mW)
I
DR
, REVERSE DRAIN CURRENT (A)
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 11 Derating Curve - Total
150
DMN5L06
Document number: DS30614 Rev. 4 - 2
3 of 4
www.diodes.com
October 2007
© Diodes Incorporated
DMN5L06
Ordering Information
Part Number
DMN5L06-7
Notes:
(Note 5)
Case
SOT-23
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
K5L = DMN5L06 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K5L
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
Feb
2
2006
T
Mar
3
2007
U
Apr
4
May
5
YM
2008
V
Jun
6
2009
W
Jul
7
Aug
8
2010
X
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
Package Outline Dimensions
A
TOP VIEW
B C
G
H
K
M
J
D
E
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
G
C
X
E
Dimensions Value (in mm)
Z
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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DMN5L06
Document number: DS30614 Rev. 4 - 2
October 2007
© Diodes Incorporated
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