APM2095PD
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-3A,
R
DS(ON)
=75mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=100mΩ(typ.) @ V
GS
=-2.5V
Pin Description
G
D
S
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-89
(3)
S
Applications
•
•
Switching Regulators
Switching Converters
(1)
G
D
(2)
P-Channel MOSFET
Ordering and Marking Information
APM 2095P
L e a d F re e C o d e
H a n d lin g C o d e
T em p. R ange
P ackage C ode
P ackage C ode
D : S O T -8 9
O p e r a tin g J u n c tio n T e m p . R a n g e
C : - 5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
L e a d F re e C o d e
L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e
APM 2095P D:
APM 2095
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
1
www.anpec.com.tw
APM2095PD
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation for Single Operation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Rating
-20
±10
-3
-12
-1
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Condition
APM2095PD
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=-250µA
V
DS
=-12V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-3A
V
GS
=-2.5V, I
DS
=-1.5A
I
SD
=-0.5A , V
GS
=0V
-20
-1
-30
-0.5
-0.7
75
100
-0.7
-1
±100
100
130
-1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
11.5
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-3A
1.7
1.8
15
nC
Gate-Source Charge
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
2
www.anpec.com.tw
APM2095PD
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
b
Test Condition
APM2095PD
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Notes:
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
12.5
1160
250
85
12
21
42
85
32
25
52
18
Ω
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
ns
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
3
www.anpec.com.tw
APM2095PD
Typical Characteristics
Power Dissipation
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
Drain Current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
A
=25 C,V
G
=-4.5V
0
20
40
60
80 100 120 140 160 180
o
T
j
- Junction Temperature (°C)
-I
D
- Drain Current (A)
P
tot
- Power (W)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistence
50
2
1
Thermal Transient Impedance
Duty = 0.5
-I
D
- Drain Current (A)
im
it
10
on
)L
0.2
0.1
Rd
s(
300
µ
s
0.1
0.02
0.01
0.05
1
1ms
10ms
100ms
1s
0.1
DC
0.01
Single Pulse
T
A
=25 C
0.01
0.01
0.1
o
1
10
100
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
R
θ
JA
: 85 C/W
2
0.1
1
10
100
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
4
www.anpec.com.tw
APM2095PD
Typical Characteristics (Cont.)
Output Characteristics
12
V
GS
=-3,-4,-5,-6,-7,-8,-9,-10V
10
140
130
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
120
110
100
90
80
70
60
50
40
0
2
4
V
GS
=-2.5V
-I
D
- Drain Current (A)
8
-2V
6
V
GS
=-4.5V
4
-1.5V
2
0
0
2
4
6
8
10
6
8
10
12
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Transfer Characteristics
12
1.8
1.6
Gate Threshold Voltage
I
DS
=-250
µ
A
Normalized Threshold Voltage
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
-I
D
- Drain Current (A)
8
6
4
T
j
=125 C
2
T
j
=25 C
0
0.0
o
o
T
j
=-55 C
o
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005
5
www.anpec.com.tw
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