APM2800B
N-Channel Enhancement Mode MOSFET with Schottky Diode
Features
MOSFET
Pin Description
•
20V/3A ,
R
DS(ON)
=50mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=90mΩ(typ.) @ V
GS
=2.5V
•
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Low Forward Voltage
(1)
G
Top View of SOT-25
(5)
D
(4)
C
SBD
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S
(2)
A
(3)
N-Channel MOSFET
SBD
Ordering and Marking Information
APM2800
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
B : SOT-25
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM2800B :
M80X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
1
www.anpec.com.tw
APM2800B
Absolute Maximum Ratings
Symbol
[MOSFET]
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
[SBD]
V
RRM
I
FSM
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
(T
A
= 25°C unless otherwise noted)
Rating
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300
µ
s Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=4.5V
20
±10
3
10
1
150
-55 to 150
0.83
0.3
150
W
°C/W
V
A
A
°C
Repetitive Peak Reverse Voltage
Maximum Peak Forward Surge Current
20
5.5
V
A
Electrical Characteristics
Symbol
[MOSFET]
Parameter
(T
A
= 25°C unless otherwise noted)
APM2800B
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SDa
a
20
1
30
0.45
0.6
50
90
0.7
1
±100
70
110
1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=3A
V
GS
=2.5V, I
DS
=1.7A
I
SD
=0.5A, V
GS
=0V
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
2
www.anpec.com.tw
APM2800B
Electrical Characteristics (Cont.)
Symbol
[MOSFET]
Dynamic Characteristics
b
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
[SBD]
V
R
V
F1
V
F2
I
R
C
b
(T
A
= 25°C unless otherwise noted)
APM2800B
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
255
70
50
6
12
10
23
12
ns
5
12
6
pF
V
DD
=10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
5
0.7
0.7
6.5
nC
Reverse Voltage
Forward Voltage
Reverse Current
Junction Capacitance
I
R
=0.5mA
I
F
=10mA
I
F
=500mA
V
R
=15V
V
R
=10V,
Frequency=1.0MHz
20
0.4
0.5
200
45
V
V
V
µ
A
pF
Notes:
a: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
b: Guaranteed by design, not subject to production testing
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
3
www.anpec.com.tw
APM2800B
Typical Characteristics
N-Channel MOSFET
Power Dissipation
1.0
4.0
3.5
Drain Current
0.8
3.0
I
D
- Drain Current (A)
0
20
40
60
80 100 120 140 160
P
tot
- Power (W)
0.6
2.5
2.0
1.5
1.0
0.5
0.4
0.2
0.0
0.0
0
20
40
60
80 100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
30
10
2
1
Thermal Transient Impedance
Duty = 0.5
I
D
- Drain Current (A)
Rd
s(o
n)
Lim
it
1
300
µ
s
1ms
10ms
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
0.1
100ms
1s
DC
T
A
=25 C
o
0.01
0.01
0.1
1
10
100
0.01
1E-4
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
4
www.anpec.com.tw
APM2800B
Typical Characteristics (Cont.)
Output Characteristics
10
9
8
V
GS
= 3,4,5,6,7,8,9,10V
Drain-Source On Resistance
0.14
0.12
V
GS
=2.5V
R
DS(ON)
- On - Resistance (Ω)
I
D
- Drain Current (A)
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
2V
2.5V
0.10
0.08
0.06
0.04
0.02
0.00
V
GS
=4.5V
0
2
4
6
8
10
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
10
9
8
Gate Threshold Voltage
1.8
1.6
I
DS
=250
µ
A
Normalized Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
D
- Drain Current (A)
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
j
=125 C
o
o
T
j
=25 C
T
j
=-55 C
o
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
5
www.anpec.com.tw
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