APM3009NU
N-Channel Enhancement Mode MOSFET
Features
•
30V/50A,
R
DS(ON)
=7mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=11mΩ (typ.) @ V
GS
=4.5V
Pin Description
G
D
S
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of TO-252
D
Applications
•
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM3009N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM3009N U :
APM3009N
XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
www.anpec.com.tw
APM3009NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
11
100
75
50*
30
50
20
2.5
W
°C/W
V
°C
°C
A
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θ
JC
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
A
A
Mounted on PCB of 1in
2
Pad Area
I
DP
I
D
P
D
R
θ
JA
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
100
75
14
9
2.5
1
50
100
75
11
7
1.6
0.6
75
W
°C/W
W
°C/W
A
A
Mounted on PCB of Minimum Footprint
I
DP
I
D
P
D
R
θ
JA
Note:
* Current limited by bond wire.
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
A
A
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
2
www.anpec.com.tw
APM3009NU
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM3009NU
Min.
Typ.
Max.
Test Condition
Unit
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
I
D
=11A, V
DD
=15V
30
1
30
1
1.5
7
11
2
±100
9
15
30
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=35A
V
GS
=4.5V, I
DS
=20A
I
SD
=20A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
V
µ
A
V
nA
m
Ω
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
V
SDa
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Notes:
Diode Forward Voltage
0.7
1.3
V
Ω
pF
Dynamic Characteristics
b
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
1.2
1710
465
300
10
7
35
10
15
13
50
20
ns
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
40
V
DS
=15V, V
GS
=10V,
I
DS
=35A
4.8
8.4
52
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
3
www.anpec.com.tw
APM3009NU
Typical Characteristics
Power Dissipation
60
Drain Current
60
50
50
40
I
D
- Drain Current (A)
P
tot
- Power (W)
40
30
30
20
20
10
T
A
=25 C
0
20 40 60 80 100 120 140 160 180
o
10
T
C
=25 C,V
G
=10V
0
0
20 40 60 80 100 120 140 160 180
o
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
300
100
2
1
Thermal Transient Impedance
I
D
- Drain Current (A)
it
im
)L
(on
ds
R
Duty = 0.5
10ms
100ms
1s
DC
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-4
Single Pulse
1E-3
0.01
0.1
10
1
0.1
0.1
T
c
=25 C
o
Mounted on 1in pad
o
R
θ
JA
:50 C/W
2
1
10
80
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
4
www.anpec.com.tw
APM3009NU
Typical Characteristics (Cont.)
Output Characteristics
100
90
80
V
GS
=4,5,6,7,8,9,10V
14
16
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
12
V
GS
=4.5V
10
8
6
4
2
0
V
GS
=10V
I
D
- Drain Current (A)
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
3V
0
20
40
60
80
100
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
100
90
80
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
DS
=250
µ
A
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
T
j
=125 C
T
j
=25 C
o
o
T
j
=-55 C
o
Normalized Threshold Vlotage
I
D
- Drain Current (A)
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
5
www.anpec.com.tw
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