APM3023NU
N-Channel Enhancement Mode MOSFET
Features
•
30V/30A,
R
DS(ON)
=15mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=22mΩ (typ.) @ V
GS
=4.5V
Pin Description
G
D
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
S
Top View of TO-252
D
Applications
•
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM3023N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM3023N U :
APM3023N
XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
www.anpec.com.tw
APM3023NU
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Rating
30
±20
150
-55 to 150
20
100
60
30*
20
50
20
2.5
W
°C/W
V
°C
°C
A
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θ
JC
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
2
A
A
Mounted on PCB of 1in Pad Area
I
DP
I
D
P
D
R
θ
JA
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
100
60
10
4
2.5
1
50
100
60
7
5
1.6
0.6
75
W
°C/W
W
°C/W
A
A
Mounted on PCB of Minimum Footprint
I
DP
I
D
P
D
R
θ
JA
Note:
* Current limited by bond wire.
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
A
A
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
2
www.anpec.com.tw
APM3023NU
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Static Characteristics
Parameter
Test Condition
APM3023NU
Min.
Typ.
Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=10A
I
SD
=15A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
30
1
30
1
1.5
15
22
2
±100
20
28
V
µ
A
V
nA
mΩ
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON) a
Drain-Source On-state Resistance
Diode Characteristics
V
SDa
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
rr
T
rr
Q
g
Q
gs
Q
gd
Notes:
Diode Forward Voltage
0.7
1.3
V
Ω
pF
Dynamic Characteristics
b
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=100A/
µ
s
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
2.5
1040
200
85
11
17
37
20
12.1
22
18
26
54
30
ns
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
30
V
DS
=15V, V
GS
=10V,
I
DS
=20A
5.8
3.8
40
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
3
www.anpec.com.tw
APM3023NU
Typical Characteristics
Power Dissipation
60
Drain Current
35
30
25
20
15
10
5
50
P
tot
- Power (W)
40
30
20
10
T
C
=25 C
0
20 40
60 80 100 120 140 160 180
o
I
D
- Drain Current (A)
0
0
T
C
=25 C,V
G
=10V
0
20 40
60 80 100 120 140 160 180
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
300
100
2
1
Thermal Transient Impedance
I
D
- Drain Current (A)
n)
(o
ds
R
it
Lim
Duty = 0.5
0.2
0.1
1ms
10ms
10
0.1
0.05
0.02
0.01
Single Pulse
100ms
1s
DC
1
0.01
0.1
0.1
T
C
=25 C
1
10
100
o
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
:50 C/W
2
1E-3
0.01
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
4
www.anpec.com.tw
APM3023NU
Typical Characteristics (Cont.)
Output Characteristics
30
27
24
V
GS
=4,5,6,7,8,9,10V
Drain-Source On Resistance
40
35
R
DS(ON)
- On - Resistance (mΩ)
30
25
20
15
10
5
0
V
GS
=10V
V
GS
=4.5V
I
D
- Drain Current (A)
21
18
15
12
9
6
3
2V
3V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
3
6
9
12 15 18 21 24 27 30
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
40
35
30
1.4
Gate Threshold Voltage
I
DS
=250
µ
A
Normalized Threshold Voltage
1.2
I
D
- Drain Current (A)
25
20
15
10
5
T
j
=25 C
o
o
1.0
0.8
T
j
=125 C
T
j
=-55 C
o
0.6
0.4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.2
-50 -25
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
5
www.anpec.com.tw
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