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BUK6213-30A

Description
TrenchMOS Intermediate level FET
CategoryDiscrete semiconductor    The transistor   
File Size89KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK6213-30A Overview

TrenchMOS Intermediate level FET

BUK6213-30A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code_compli
ConfigurationSingle
Maximum drain current (Abs) (ID)64 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)102 W
surface mountYES
BUK6213-30A
TrenchMOS™ Intermediate level FET
M3D300
Rev. 02 — 22 September 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s
Low on-state resistance
s
175
°C
rated
s
Q101 compliant
s
Intermediate level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
267 mJ
s
I
D
55 A
s
R
DSon
= 10 mΩ (typ)
s
P
tot
102 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Simplified outline
[1]
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
d
mb
g
s
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1]
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