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CMLTA44

Description
SURFACE MOUNT PICOmini EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size92KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMLTA44 Overview

SURFACE MOUNT PICOmini EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR

CMLTA44 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
CMLTA44
SURFACE MOUNT
PICOmini
TM
EXTREMELY HIGH VOLTAGE
NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
CC
E
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLTA44
type is an NPN High Voltage transistor, epoxy
molded in a space saving PICOmini™ SOT-563
surface mount package and designed for
extremely high voltage applications.
MARKING CODE: 44C
CC
B
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
500
°C
°C/W
SYMBOL
VCBO
VCEO
VEBO
IC
PD
450
400
6.0
300
250
UNITS
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=400V
ICES
IEBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCE=400V
VBE=4.0V
IC=100µA
IC=100µA
IC=1.0mA
IE=10µA
IC=1.0mA, IB=0.1mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
450
450
400
6.0
MAX
100
500
100
UNITS
nA
nA
nA
V
V
V
V
0.40
0.50
0.75
0.75
40
50
45
20
20
7.0
130
200
V
V
V
V
MHz
pF
pF
R0 (28-October 2004)
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