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CPS057

Description
Silicon Controlled Rectifier Sensitive Gate SCR Chip
File Size133KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CPS057 Overview

Silicon Controlled Rectifier Sensitive Gate SCR Chip

PROCESS
CPS057
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
3,374
PRINCIPAL DEVICE TYPES
CS39-4D
2N2323 thru 2N2329
CS223-4M
GLASS PASSIVATED MESA
57 x 57 MILS
8.7 MILS ± 0.6 MILS
24 x 14 MILS
7.9 x 7.9 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
BACKSIDE ANODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
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