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JANTX2N3019S

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size2MB,34 Pages
ManufacturerRaytheon Company
Websitehttps://www.raytheon.com/
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JANTX2N3019S Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN

JANTX2N3019S Parametric

Parameter NameAttribute value
MakerRaytheon Company
package instructionSIMILAR TO TO-39, 3 PIN
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/391H
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 9 April 2004.
INCH-POUND
MIL-PRF-19500/391J
9 December 2004
SUPERSEDING
MIL-PRF-19500/391H
30 April 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB
JAN, JANTX, JANTXV, JANS, JANHCA AND JANKCA
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for the unencapsulated device type 2N3700.
1.2 Physical dimensions. See figure 1, 2N3019 (TO-5) and 2N3019S (similar to TO-39), figure 2, 2N3057A
(TO-46), figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, and figure 5, JANHCA2N3700 and JANKCA2N3700.
1.3 Maximum ratings unless otherwise specified T
A
= +25°C.
I
C
A dc
1
Types
V
CBO
V dc
140
P
T
T
A
= +25°C
(1) (2)
W
0.800
0.800
0.500
0.500
0.500
V
EBO
V dc
7
P
T
T
C
= +25°C
(1) (2)
W
5
5
1.8
1
N/A
V
CEO
V dc
80
T
J
and T
STG
°C
-65 to +200
R
θJA
(2) (3) (4)
°C/W
175
175
325
325
325
R
θJC
(2) (3)
°C/W
30
30
80
150
N/A
R
θJSP(IS)
(2) (3)
°C/W
N/A
N/A
N/A
N/A
90
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
(1)
(2)
(3)
(4)
P
T
T
SP(IS)
= +25°C
(1) (2)
W
N/A
N/A
N/A
N/A
1.5
For derating, see figures 6, 7, 8, 9, 10, 11, and 12.
See 3.3.
For thermal curves, see figures 13, 14, 15, 16, 17, 18, and 19.
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 7 and
12 for the UB package and use R
θJA
.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961

JANTX2N3019S Related Products

JANTX2N3019S JANTXV2N3019S
Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN
Maker Raytheon Company Raytheon Company
package instruction SIMILAR TO TO-39, 3 PIN SIMILAR TO TO-39, 3 PIN
Reach Compliance Code unknown unknown
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code O-MBCY-W3 O-MBCY-W3
Number of components 1 1
Number of terminals 3 3
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
Guideline MIL-19500/391H MIL-19500/391H
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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