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CFD2375Q

Description
NPN SILICON PLANAR POWER TRANSISTOR
File Size95KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CFD2375Q Overview

NPN SILICON PLANAR POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
CFD2375
TO-220FP Fully Isolated
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current Peak
Collector Current
Base Current
Collector Power Dissipation @T
c
=25
o
C
@T
a
=25 C
Junction Temperature
Storage Temperature Range
o
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
CP
I
C
I
B
P
C
T
j
T
stg
VALUE
80
60
6
3500
1500
6
3
1
25
2
150
- 55 to +150
UNIT
V
V
V
V
RMS
V
RMS
A
A
A
W
W
ºC
o
C
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
µ
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
= 80V, I
E
=0
Collector Cut off Current
I
CEO
V
CE
= 40V, I
B
=0
Collector Cut off Current
I
EBO
V
EB
= 6V, I
C
=0
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Transition Frequency
V
CEO
h
FE
V
CE(sat)
f
T
I
C
= 25mA, I
B
=0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
=12V, I
C
= 0.2A
f=10MHz
P : 800 - 1500
MIN
TYP
MAX
100
100
100
1500
1
60
500
50
UNIT
µA
µA
µA
V
V
MHz
h
FE
Classification
Q : 500 - 1000
Continental Device India Limited
Data Sheet
Page 1 of 3

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