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CJF31C

Description
SILICON PLANAR POWER TRANSISTORS
File Size115KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CJF31C Overview

SILICON PLANAR POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
NPN
CJF31
CJF31A
CJF31B
CJF31C
PNP
CJF32
CJF32A
CJF32B
CJF32C
TO-220FP Fully Isolated
Plastic Package
Designed for use in General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
j,Tstg
CJF31
CJF32
40
40
CJF31A
CJF32A
60
60
CJF31B
CJF32B
80
80
5
3
5
1
40
0.32
2
0.016
-65 to +150
CJF31C
CJF32C
100
100
UNIT
V
V
V
A
A
A
W
W/ºC
W
W/ºC
ºC
R
th(j-a)
R
th(j-c)
62.5
3.125
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO (sus)
* I
C
=30mA, I
B
=0
Collector Emitter (sus) Voltage
CJF31, CJF32
CJF31A, CJF32A
CJF31B, CJF32B
CJF31C, CJF32C
Collector Cut off Current
I
CEO
CJF31/31A, CJF32/32A
V
CE
=30V, I
B
=0
CJF31B/31C, CJF32B/32C
V
CE
=60V, I
B
=0
Collector Cut off Current
Emitter Cut off Current
I
CES
I
EBO
V
CE
=Rated V
CES
, V
EB
=0
V
BE
=5V, I
C
=0
MIN
40
60
80
100
MAX
-
-
-
-
UNIT
V
V
V
V
-
-
0.3
0.3
mA
mA
-
-
200
1.0
µA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

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