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CSC2713G

Description
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
File Size100KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CSC2713G Overview

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CSC2713
SOT-23
Formed SMD Package
3
1
2
MARKING
CSC2713 =13
CSC2713G =13G
CSC2713L =13L
Complementary CSA1163
Audio Frequency General Purpose Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
EBO
I
C
I
B
P
C
T
j
T
stg
VALUE
120
120
5
100
20
150
125
- 55 to +125
UNITS
V
V
V
mA
mA
mW
ºC
ºC
Electrical Characterstics (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation
Voltage
Transition Frequency
Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
CONDITIONS
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, f=1KHz,
R
g
=10kΩ
G : 200 - 400
L : 350 - 700
100
4
10
200
MIN
TYP
MAX
100
100
700
0.3
V
MHz
pF
dB
UNIT
nA
nA
h
FE
Classification
CSC2713Rev_1 021203E
Continental Device India Limited
Data Sheet
Page 1 of 3

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