APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
30
I
D
, DRAIN CURRENT (AMPERES)
3000
12V
1000
500
CAPACITANCE (pf)
25
20
Ciss
Coss
11V
10V
9V
100
50
Crss
15
8V
10
7V
5
0
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics
10
1
.1
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.10
TJ = -55°C
20
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
25
1.05
TJ = +25°C
15
1.00
10
050-4929 A 2-2006
5
TJ = -55°C
TJ = +125°C
0.95
0
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
0.90
-50
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
-25
ARF475FL
0.35
0.30
0.25
0.7
0.20
0.5
0.15
0.10
0.05
0
0.3
SINGLE PULSE
0.1
0.05
10
-5
10
-4
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
D = 0.9
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 5a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
Junction
temp. (°C)
0.142
Power
(watts)
0.00719
0.169
Case temperature. (°C)
0.0856
Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
30
60
90
120
150
Zin (Ω) gate to gate
5.2 -j10
1.37 -j5.2
.53 -j2.6
.25 -j1.0
.25 +j0.2
Z
OL
(Ω) drain - drain
41 -j20
26 -j25
16 -j23
10 -j20
6.7 -j17
050-4929 A 2-2006
Zin - Gate -gate shunted with 25
Ω
I
DQ
= 15mA each side
Z
OL
- Conjugate of optimum load for 600 Watts peak output at Vdd = 150V
25% duty cycle and PW = 5ms
ARF475FL
128MHz Test amplifier
Po = 900W @150V
3ms pulse 10% Duty Cycle
R1
J1
T1
T2
C7
C1
C8
R4
C9
Vg2
TL4
DUT
TL6
TL1
C2
TL2
C4
R2
C1 25pF poly trimmer
C2 750pF ATC 700B
C3-4 2200pF NPO 500V chip
C5-10 10nF 500V chip
C11 1000uF 250V electroytic
L1 30nH 1.5t #18 enam .375" dia
L2 680nH 12t #24 enam .312" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2uH
L1
Vg1
C6
R3
L2
TL3
C3
TL5
C5
+
L3
C11
C10
+
Vdd
-
T3
J2
R1-2 3.1Ω : 3 parallel 22Ω 1W 2512 SMT
R3-4 2.2kΩ 1/4W axial
T1 1:1 balun 50Ω coax on Fair-Rite 2843000102 core
T2 4:1 25Ω coax on 2843000102 Fair-Rite balun core
T3 1:1 coax balun RG-303 on 2861006802 Fair-Rite core
TL1-2 Printed line L= 0.75" w =.23"
TL3-6 Printed line L= 0.65" w =.23"
0.23" wide stripline on FR-4 board is ~ 30Ω Zo
Peak Output Power vs. Vdd and Duty Cycle
900
800
700
600
500
400
300
200
100
0
80
100
120
140
160
.125R
4 pls
1.2
Max
Duty Cycle
Notes:
The value of L1 must be adjusted as the supply voltage is
changed to maintain resonance in the output circuit. At
128MHz its value changes from approximately 40nH at
100V to 30nH at 150V.
With the 50Ω drain-to-drain load, the duty cycle above
100V must be reduced to insure power dissipation is
within the limits of the device. Maximum pulse length
should be 100mS or less. See transient thermal
impedance, figure 5.
1
0.8
Po Watts
0.6
0.4
0.2
0
.050
.100
.050
Drain Supply Voltage Vdd
S
D1
D2
S
.325
.125dia
4 pls
Thermal Considerations and Package Mounting:
.570
.150
.225
.225
The package design clamps the ceramic base to the heatsink. A
clamped joint maintains the required mounting pressure while al-
lowing for thermal expansion of both the base and the heat sink.
Four 4-40 (M3) screws provide the required mounting force. T = 6
in-lb (0.68N-m).
.150
The rated power dissipation is only available when the package
mounting surface is at 25°C and the junction temperature is 175°C .
The thermal resistance between junctions and case mounting sur-
face is 0.3°C/W. When installed, an additional thermal impedance
of 0.1°C/W between the package base and the mounting surface is
typical. Insure that the mounting surface is smooth and flat. Ther-
mal joint compound must be used to reduce the effects of small sur-
face irregularities. Use the minimum amount necessary to coat the
surface. The heatsink should incorporate a copper heat spreader to
obtain best results.
ARF475
.320
1.250
S
G1
G2
S
.200
.300
.005 .040
050-4929 A 2-2006
1.500
HAZARDOUS MATERIAL WARNING
The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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