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1SS131

Description
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size28KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric View All

1SS131 Overview

0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34

1SS131 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Reach Compliance Codecompliant
Is SamacsysN
Diode typeRECTIFIER DIODE
Base Number Matches1
1SS131
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 80 V
• Repetitive peak reverse voltage:max. 90 V
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 34 Glass
0.078 (2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.118 (3.0)
max.
0.019 (0.50)max.
MECHANICAL DATA :
Case:
DO-34 Glass Case
Weight:
approx. 0.093g
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Power Dissipation
Maximum Non-repetitive Peak Forward Current
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
I
FM
P
D
I
FSM
T
J
T
S
Value
90
80
130
400
300
600
175
-65 to + 175
Unit
V
V
mA
mA
mW
mA
°C
°C
Electrical Characteristics
(Ta = 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Capacitance between terminals
Reverse Recovery Time
Symbol
I
R
V
F
C
T
Trr
Test Condition
V
R
= 80 V
I
F
= 100 mA
f = 1MHz ; V
R
= 0.5
I
F
= 10 mA , V
R
= 6 V
R
L
= 50
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
0.5
1.2
2.0
4.0
Unit
µA
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005

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