MBRF16H35 SERIES
PRV : 35 - 60 Volts
Io : 16 Ampere
FEATURES :
*
*
*
*
*
High current capability
High surge current capability
Low leakage, high voltage
Glass passivated chip junction
Pb / RoHS Free
SCHOTTKY BARRIER RECTIFIERS
ITO-220AC
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.406(10.3)MAX.
0.185(4.70)Max.
0.124(3.16)Max.
0.272(6.9)
0.248(6.3)
0.603(15.5)
0.573(14.8)
1
0.543(13.8)
0.512(13.2)
2
0.161(4.1)Max.
0.055(1.4)Max.
0.110(2.8)
0.098(2.5)
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
0.035(0.9)Max.
0.100(2.55)
0.030(0.76)Max.
PIN 1
PIN 2
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Tc = 25°C unless otherwise noted)
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working peak Reverse Voltage
Maximum DC blocking voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
8.3ms single half sine-wave superimposed
Maximum Instantaneous Forward
Voltage at I
F
= 16A, (Note 1)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Operating Junction Temperature Range
Storang Temperature Range
RMS Isolation Voltage from terminals to
heatsink with t = 1.0 second, RH
≤30%
V
ISOL
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25
°C
T
J
= 125
°C
SYMBOL MBRF16H35 MBRF16H45 MBRF16H50 MBRF16H60 UNIT
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
R
θJC
T
J
T
STG
0.66
0.56
100
20
3.0
- 65 to + 175
- 65 to + 175
4500
3500
(2)
(3)
35
35
35
45
45
45
16
150
50
50
50
60
60
60
V
V
A
A
0.73
0.62
V
µA
mA
°C/W
°C
°C
V
Maximum Thermal Resistance, Junction to Case
1500
(4)
Notes:
(1) Pluse test: 300µs pulse width, 1% duty cycle
(2) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Clip mounting (on case), where leads do overlap heatsink
(4) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
Page 1 of 2
Rev. 01 : May 26, 2005
RATING AND CHARACTERISTIC CURVES ( MBRF16H35 SERIES )
FIG.1 - FORWARD CURRENT
DERATING CURRENT
20
150
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE
CURRENT, AMPERES
16
125
100
75
50
25
0
T
J
= T
J
max
8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
12
8
4
0
0
25
50
75
100
125
150
175
1
10
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
T
J
= 125 °C
INSTANTANEOUS FORWARD
CURRENT, AMPERES
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
10
1
T
J
= 125
°C
0.1
T
J
= 25 °C
1
0.01
T
J
= 25
°C
0.001
0.1
0.01
0
0.0001
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
INSTANTANEOUS FORWARD
VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
10000
JUNCTION CAPACITANCE, pF
TJ = 25°C
f = 1.0 MHz
Vsig = 50mVp-p
1000
100
MBRF16H35 - MBRF16H45
MBRF16H50 - MBRF16H60
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : May 26, 2005
Embedded System
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