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S15VB20

Description
4.5 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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S15VB20 Overview

4.5 A, SILICON, BRIDGE RECTIFIER DIODE

S15VB20 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionS-PUFM-D4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeS-PUFM-D4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
S15VB20 ~ S15VB60
PRV : 200 ~ 600 Volts
Io : 15 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
SILICON BRIDGE RECTIFIER
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685
(16.70)
1.130(28.70)
1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse Voltage
Maximum Average Forward Current Tc = 83
°
C
Maximum Peak Forward Surge Current Single half sine wave
SYMBOL
V
RM
I
F(AV)
I
FSM
S15VB20
200
15
200
200
1.05
10
2.3
150
- 40 to + 150
S15VB60
600
UNIT
V
A
A
A
2
S
V
Superimposed on rated load (JEDEC Method)
Current Squared Time at 2ms
t < 10 ms. Tc = 25
°
C
Maximum Forward Voltage per Diode at I
F
= 7.5 A
Maximum DC Reverse Current at V
R
= V
RRM
I
2
t
V
F
I
R
(Pulse Measurement, Rating of per diode)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate
µ
A
°
C/W
°
C
°
C
R
θ
JC
T
J
T
STG
Page 1 of 2
Rev. 01 : April 2, 2002

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