30PRA40 datasheet, PDF - EEWORLD Datasheet

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30PRA40: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.4A, 400V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size68KB，5 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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30PRA40 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.4A, 400V V(RRM), Silicon,

30PRA40 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
package instruction	O-XALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW POWER LOSS
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.15 V
JESD-30 code	O-XALF-W2
Maximum non-repetitive peak forward current	70 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.4 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.21 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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3A 400A 210ns

FRD

Type

30PRA40

OUTLINE DRAWING

FEATURES

* Super Fast Recovery

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 100 Volts thru 600 Volts Types Available

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

RRM

F(RMS)

FSM

Tjw

Tstg

3.0

1.6

Apporox Net Weight:1.19g

30PRA40

400

Tl=121°C (Tl:Lead

50Hz Half Sine

Temperature)

Wave Resistive Load

Ta=39°C *1

4.71

50Hz Half Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

Unit

°C

Electrical/Thermal

•

Characteristics

Peak Reverse Current

Peak Forward Voltage

Reverse Recovery Time

Symbol

Conditions

Min. Typ. Max.

1.15

210

Unit

µA

°C/W

Tj= 25°C, V

= V

RRM

Tj= 25°C, I

= 3 A

trr

Ta= 25°C, I

=1A, -di/dt=50A/µs

Rth(j-l) Junction to Lead

Thermal Resistance

Rth(j-a) Junction to Ambient

∗1

∗1:

Without Fin or P.C. Board mounted

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