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HMC276LP4E

Description
GaAs MMIC 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size507KB,8 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC276LP4E Overview

GaAs MMIC 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz

HMC276LP4E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
Reach Compliance Codecompli
ECCN codeEAR99
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)23.01 dBm
Maximum insertion loss7 dB
JESD-609 codee3
Maximum operating frequency3000 MHz
Minimum operating frequency200 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesSPDT
Terminal surfaceMatte Tin (Sn)
HMC276LP4
/
HMC276LP4E
v00.0505
GaAs MMIC 4x2 SWITCH
MATRIX, 0.2 - 3.0 GHz
Typical Applications
4x2 Switch Matrix for 0.2 - 3.0 GHz Applications:
• Cable Modem
• CATV
• Cellular Systems
Features
4x2 Switch Matrix Using One IC
4x4 Switch Matrix Using Two ICs
Integrated 4 Bit Decoder
Single Positive Supply: Vdd = +5V
QFN Leadless SMT Package, 16 mm
2
8
SWITCHES - SMT
• DBS
Functional Diagram
General Description
The HMC276LP4 & HMC276LP4E are low-cost 4x2
switch matrices in leadless QFN 4x4 mm surface
mount packages for use in RF multiplexing applicati-
ons from 200 to 3000 MHz. A positive voltage con-
trolled 4 bit decoder is integrated on the switch. The
switches may be used in either 75 ohm or 50 ohm
systems.
Both switch outputs (OP1 & OP2) can independently
select any of the four inputs (HH, HL, VH, VL) or
simultaneously select the same inputs. Note that the
switch is bi-directional and input/output functionality
may be interchanged. The recommended loading
impedance is 62.5 ohms on each input (HH, HL, VH,
VL) and 75 ohms on each output (OP1 & OP2). All
data presented was measured in a 50 ohm (input/
output) system.
Electrical Specifications,
T
A
= +25° C, Vdd= +5V, 50 Ohm System
Parameter
Insertion Loss
Frequency
200 MHz
700 - 3000 MHz
200 MHz
700 - 950 MHz
950 - 1450 MHz
1450 - 2150 MHz
2150 - 3000 MHz
200 MHz
700 - 3000 MHz
200 MHz
700 - 3000 MHz
700 - 3000 MHz
700 - 3000 MHz
tRISE / tFALL (10/90% RF)
tON / tOFF (50% CTL to 10/90% RF)
700 - 3000 MHz
Min.
Typ.
6.0
6.0
Max.
7.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
Isolation
55
40
44
See OP1/2 Isolation Tables
33
37
31
35
14
16
31
22
25
18
20
20
37
26
140
350
Return Loss (Input; VL, HL, VH, HH)
Return Loss (Output; OP1, OP2)
Output IP3
Input Power for 1 dB Compression
Switching Speed
8 - 138
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC276LP4E Related Products

HMC276LP4E HMC276LP4
Description GaAs MMIC 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz GaAs MMIC 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Hittite Microwave(ADI) Hittite Microwave(ADI)
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Maximum input power (CW) 23.01 dBm 23.01 dBm
Maximum insertion loss 7 dB 7 dB
JESD-609 code e3 e0
Maximum operating frequency 3000 MHz 3000 MHz
Minimum operating frequency 200 MHz 200 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types SPDT SPDT
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)

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