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HMC382LP3E

Description
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size286KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC382LP3E Overview

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

HMC382LP3E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
package instructionLCC16,.12SQ,20
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresSMA, LOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
Gain9 dB
Maximum input power (CW)10 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals16
Maximum operating frequency2200 MHz
Minimum operating frequency1700 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC16,.12SQ,20
power supply5 V
RF/Microwave Device TypesNARROW BAND LOW POWER
surface mountYES
technologyGAAS
Terminal surfaceMatte Tin (Sn)
HMC382LP3
/
382LP3E
v00.1005
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Features
Noise Figure: 1.0 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 1.0 dB noise figure,
17 dB gain and +30 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are
13 dB typical and the LNA requires no external mat-
ching components. The HMC382LP3 & HMC382LP3E
share the same package and pinout with the
HMC376LP3 0.7 - 1.0 GHz LNA. The HMC382LP3 &
HMC382LP3E feature an externally adjustable supply
current which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications,
T
A
= +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd1 + Idd2)
14
Min.
Typ.
1.7 - 1.9
17
0.01
1.0
13
10
37
16
0.015
1.3
12
Max.
Min.
Typ.
1.9 - 2.0
15
0.01
1.05
12
13
36
16
0.015
1.35
11
Max.
Min.
Typ.
2.0 - 2.1
14
0.01
1.15
11
12
35
15.5
0.015
1.45
9
Max.
Min.
Typ.
2.1 - 2.2
12
0.01
1.2
10
9
35
14
0.015
1.5
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
29.5
67
30
67
30
67
29.5
67
dBm
mA
* Rbias resistor value sets current. See application circuit herein.
5 - 130
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC382LP3E Related Products

HMC382LP3E HMC382LP3
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Hittite Microwave(ADI) Hittite Microwave(ADI)
package instruction LCC16,.12SQ,20 LCC16,.12SQ,20
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features SMA, LOW NOISE SMA, LOW NOISE
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 9 dB 9 dB
Maximum input power (CW) 10 dBm 10 dBm
JESD-609 code e3 e0
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1
Number of terminals 16 16
Maximum operating frequency 2200 MHz 2200 MHz
Minimum operating frequency 1700 MHz 1700 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code LCC16,.12SQ,20 LCC16,.12SQ,20
power supply 5 V 5 V
RF/Microwave Device Types NARROW BAND LOW POWER NARROW BAND LOW POWER
surface mount YES YES
technology GAAS GAAS
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
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