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HMC453ST89E

Description
InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size1MB,22 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC453ST89E Overview

InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

HMC453ST89E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
Reach Compliance Codecompli
ECCN codeEAR99
Characteristic impedance50 Ω
structureCOMPONENT
Gain6 dB
Maximum input power (CW)32 dBm
JESD-609 codee3
Maximum operating frequency2200 MHz
Minimum operating frequency400 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Terminal surfaceMatte Tin (Sn)
HMC453ST89
/
453ST89E
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
AMPLIFIERS - SMT
Designer’s Kit
Available
Typical Applications
The HMC453ST89 / HMC453ST89E is ideal for applica-
tions requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless
Features
Output IP3: +49 dBm
20.5 dB Gain @ 400 MHz
7.5 dB Gain @ 2100 MHz
41% PAE @ +32.5 dBm Pout
+26 dBm CDMA2000
Channel Power @ -45 dBc ACP
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
General Description
The HMC453ST89 & HMC453ST89E are high
dynamic range GaAs InGaP HBT 1.6 Watt MMIC power
amplifiers operating from 0.4 to 2.2 GHz and packaged
in industry standard SOT89 packages. Utilizing a
minimum number of external components and a single
+5V supply, the amplifier output IP3 can be optimized
to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The
high output IP3 and PAE make the HMC453ST89 &
HMC453ST89E ideal power amplifiers for Cellular/
PCS/3G and Fixed Wireless applications.
Electrical Specifications,
T
A
= +25°C, Vs= +5V
[1]
Parameter
Frequency Range
Gain
Gain Variation Over
Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB
Compression (P1dB)
Saturated Output
Power (Psat)
Output Third Order
Intercept (IP3) [2]
Noise Figure
Supply Current (Icq)
44
28.5
18
Min.
Typ.
400 - 410
20.5
0.012
20
12
31.5
32
47
9
725
45
29
0.02
16.5
Max.
Min.
Typ.
450 - 496
19
0.012
14
12
32
32.25
48
9
725
44
28.5
0.02
12
Max
Min.
Typ.
810 - 960
14.5
0.012
20
13
31.5
31.75
47
6.5
725
46
29
0.02
6
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dB
0.02
dB /
°C
dB
dB
dBm
dBm
dBm
dB
mA
1710 - 1990
8.5
0.012
15
15
32
32.5
49
7
725
46
29.5
0.02
6
2010 - 2170
7.5
0.012
13
18
32.5
32.75
49
6.5
725
[1] Specifications and data reflect HMC453ST89 measured using the respective application circuits for each designated frequency band found herein.
Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of 0 dBm per tone, 1 MHz spacing.
5 - 318
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC453ST89E Related Products

HMC453ST89E HMC453ST89
Description InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Hittite Microwave(ADI) Hittite Microwave(ADI)
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 6 dB 6 dB
Maximum input power (CW) 32 dBm 32 dBm
JESD-609 code e3 e0
Maximum operating frequency 2200 MHz 2200 MHz
Minimum operating frequency 400 MHz 400 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)

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