HMC495LP3
/
495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Features
Wideband RF Frequency Range
High Carrier Suppression: 38 dBc
Very Low Noise Floor: -158 dBm/Hz
Low LO Power: -6 to +6 dBm
Differential or Single Ended LO Input
Single Low Current Supply: +3.3V@ 108 mA
Typical Applications
The HMC495LP3 / HMC495LP3E is suitable for
various modulation systems:
• UMTS, GSM or CDMA Basestations
• Fixed Wireless or WLL
• ISM Transceivers, 900 & 2400 MHz
8
MODULATORS - SMT
• GMSK, QPSK, QAM, SSB Modulators
Functional Diagram
General Description
The HMC495LP3 & HMC495LP3E are low noise
Wideband Direct Quadrature Modulator RFICs which
are ideal for digital modulation applications from 250
- 3800 MHz including; Cellular/3G, Broadband Wireless
Access & ISM circuits. Housed in a compact 3x3 mm
(LP3) SMT QFN package, the RFIC requires minimal
external components & provides a low cost alternative
to more complicated double upconversion architec-
tures. The RF output port is single-ended and matched
to 50 Ohms with no external components. The LO re-
quires -6 to +6 dBm and can be driven in either dif-
ferential or single-ended mode while the Baseband in-
puts will support modulation inputs from DC - 250 MHz
typical. This device is optimized for a supply voltage of
+3.3V @ 108 mA and will provide stable performance
over a +3.0V to +3.6V range.
Electrical Specifications,
See Test Conditions on following page herein.
Parameter
Frequency Range, RF
Output Power
Output P1dB
Output IP3
Output Noise Floor
Carrier Suppression (uncalibrated)
Sideband Suppression
(uncalibrated)
IM3 Suppression
RF Port Return Loss
LO Port Return Loss
CDMA IS95
ACPR@ 880 MHz & 1960 MHz
Channel Power
W-CDMA 3GPP
ACPR@ 1960 & 2140 MHz
Channel Power
N/A
N/A
-60
-17.3
-59
-14.4
N/A
N/A
dBc
dBm
-72
-15
-71.5
-18.4
N/A
N/A
N/A
N/A
dBc
dBm
-7
Min.
Typ.
450 - 960
-5
2
17
-159
38
34
59
18
13
-8
Max.
Min.
Typ.
1800 - 2200
-6
1
14
-158
38
31
50
17
8
-9
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dBm
dBm
dBm
dBm/Hz
dBc
dBc
dBc
dB
dB
2100 - 2700
-7
0
14
-158
35
30
50
16
7
-11
3400 - 3800
-9
-2
13
-157
34
28
56
13
5
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3
/
495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Electrical Specifications,
(continued)
Parameter
RF Output
RF Frequency Range
RF Return Loss
LO Input
LO Frequency Range
LO Input Power
LO Port Return Loss
Baseband Input Port
Baseband Port Bandwidth
Baseband Input DC Voltage (Vbbdc)
Baseband Input DC Bias Current (Ibbdc)
Single-ended Baseband Input Capacitance
DC Power Requirements
Supply Voltage (Vcc1, Vcc2, Vb1, Vb2)
Supply Current (Icc1, Icc2, Ib1, Ib2)
DC
1.0
1.15
40
0.5
250
1.2
MHz
V
μA
pF
With 68 Ohm shunt resistor on LO port.
With 68 Ohm shunt resistor on LO port.
0.25
-6
0
7
3.8
+6
GHz
dBm
dB
0.25
16
3.8
GHz
dB
Conditions
Min.
Typ.
Max.
Units
8
MODULATORS - SMT
With 50Ω source & external 10 pF shunt cap to ground.
Refer to HMC495LP3 Application Circuit.
This parameter can be varied in order to optimize
the device performance over temperature and/or supply.
Single-ended.
De-embed to the lead of the device.
See Test Conditions Below
3
3.3
108
3.6
V
mA
Test Conditions:
Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter
Temperature
Baseband Input Frequency
Baseband Input DC Voltage (Vbbdc)
Baseband Input AC Voltage
Baseband Input AC Voltage for OIP3 Measurement
Frequency Offset for Output Noise Measurements
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
LO Input Power
LO Input Mode
Mounting Configuration
Sideband & Carrier Feedthrough
(Peak to Peak Differential, I and Q)
(Peak to Peak Differential, I and Q)
Condition
+25 °C
200 kHz
1.15V
800 mV
400 mV per tone @ 150 & 250 kHz
20 MHz
3.3V
0 dBm
Single-Ended
Refer to HMC495LP3 Application Schematic Herein
Uncalibrated
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-3
HMC495LP3
/
495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output Noise Floor
and P1dB vs. Frequency
-120
5
0
-5
-10
-15
-20
-25
-30
-35
OUTPUT NOISE (dBm/Hz)
Wideband Performance vs. Frequency
OUTPUT POWER (dBm), CARRIER SUPPR. (dBc)
SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
0
400
3rd HARMONIC
CARRIER SUPPRESSION
SIDEBAND SUPPRESSION
OUTPUT POWER
-130
0
OUTPUT P1dB (dBm)
-140
-5
8
MODULATORS - SMT
-150
-10
-40
-45
-50
-55
-160
SET-UP NOISE FLOOR
-15
-170
0
400
-60
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-20
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
Output IP3 vs. Frequency
20
18
16
14
12
10
8
6
4
2
0
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
Return Loss
0
LO (Single-ended)
RF
-5
RETURN LOSS (dB)
OUTPUT IP3 (dBm)
-10
-15
-20
-25
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
8-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3
/
495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 830 MHz
20
15
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
10
5
0
-5
-10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
Output IP3 & Output Power vs.
LO Power Over Temperature@ 830 MHz
20
15
OUTPUT IP3 (dBm)
10
5
0
-5
-10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
+25 C
+85 C
-40 C
-3
-4
-5
-6
-7
-8
-9
-3
-4
OUTPUT POWER (dBm)
-5
-6
-7
-8
-9
8
MODULATORS - SMT
Output Noise vs. LO Power
Over Temperature@ 830 MHz
-140
Output Noise vs. LO Power
Over Supply@ 830 MHz
-140
OUTPUT NOISE (dBm/Hz)
-145
+25 C
+85 C
-40 C
OUTPUT NOISE (dBm/Hz)
-145
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
-150
-150
-155
-155
-160
-6
-160
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
LO POWER (dBm)
Sideband Suppression*
vs. LO Power@ 830 MHz
-20
SIDEBAND SUPPRESSION (dBc)
Carrier Suppression*
vs. LO Power@ 830 MHz
-20
CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
* See note titled “Calibrated vs. Uncalibrated test results” herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-5
HMC495LP3
/
495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 1900 MHz
20
15
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
10
5
0
-5
-10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
Output IP3 & Output Power vs.
LO Power Over Temperature@ 1900 MHz
20
15
OUTPUT IP3 (dBm)
10
5
0
-5
+25 C
+85 C
-40 C
-3
-4
-5
-6
-7
-8
-9
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
-3
-4
OUTPUT POWER (dBm)
-5
-6
-7
-8
-9
8
MODULATORS - SMT
-10
Output Noise vs. LO Power
Over Temperature@ 1900 MHz
-140
Output Noise vs. LO Power
Over Supply@ 1900 MHz
-140
OUTPUT NOISE (dBm/Hz)
OUTPUT NOISE (dBm/Hz)
-145
+25 C
+85 C
-40 C
-145
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
-150
-150
-155
-155
-160
-6
-160
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
LO POWER (dBm)
Sideband Suppression*
vs. LO Power@ 1900 MHz
-20
SIDEBAND SUPPRESSION (dBc)
Carrier Suppression*
vs. LO Power@ 1900 MHz
-20
CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
* See note titled “Calibrated vs. Uncalibrated test results” herein.
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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